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ZC830B

Description
10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size17KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric View All

ZC830B Overview

10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

ZC830B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Minimum breakdown voltage25 V
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio4.5
Nominal diode capacitance10 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.33 W
Certification statusNot Qualified
minimum quality factor300
Maximum repetitive peak reverse voltage25 V
Maximum reverse current0.02 µA
Reverse test voltage20 V
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Varactor Diode ClassificationHYPERABRUPT
SOT23 SILICON VARIABLE
CAPACITANCE DIODES
ISSUE 5 – JANUARY 1998
FEATURES
* Close Tolerance C-V Characteristics
* High Tuning Ratio
* Low I
R
Enabling Excellent Phase Noise Performance
(I
R
Typically <200pA at 25V)
ZC830/A/B
to
ZC836/A/B
1
1
3
2
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Forward Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
I
F
P
tot
T
j
:T
stg
MAX
200
330
SOT23
UNIT
mA
mW
°C
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
=25°C)
PARAMETER
Reverse Breakdown
Voltage
Reverse Voltage Leakage
Temperature Coefficient
of Capacitance
SYMBOL
V
BR
I
R
MIN
25
0.2
0.03
10
0.04
TYP
MAX
UNIT CONDITIONS
V
nA
%/°C
I
R
=10
µ
A
V
R
=20V
V
R
=3V, f=1MHz
η
TUNING CHARACTERISTICS (at T
amb
=25°C)
PART NO
Nominal Capacitance (pF)
V
R
=2V, f=1MHz
MIN
ZC830A
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
ZC836A
9.0
13.5
19.8
29.7
42.3
61.2
90.0
NOM
10.0
15.0
22.0
33.0
47.0
68.0
100.0
MAX
11.0
16.5
24.2
36.3
51.7
74.8
110.0
Minimum
Q
@ V
R
=3V
f=50MHz
300
300
200
200
200
100
100
Capacitance Ratio
C
2
/ C
20
at f=1MHz
MIN
4.5
4.5
5.0
5.0
5.0
5.0
5.0
MAX
6.0
6.0
6.5
6.5
6.5
6.5
6.5
Note:
No suffix
±
20% (e.g. ZC830), suffix B
±
5% (e.g. ZC830B)
Spice parameter data is available upon request for this device
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