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3NZ41

Description
DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size175KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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3NZ41 Overview

DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD, Rectifier Diode

3NZ41 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction3-6E1A, 2 PIN
Reach Compliance Codeunknown
Other featuresFORMED LEAD OPTIONS ARE AVAILABLE
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)240
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current10 µA
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
3BZ41,3GZ41,3JZ41,3NZ41
TOSHIBA Rectifier Silicon Diffused Type
3BZ41, 3GZ41, 3JZ41, 3NZ41
General Purpose Rectifier Applications
Average Forward Current: I
F (AV)
=
3.0 A (Ta
=
45°C)
Repetitive Peak Reverse Voltage: V
RRM
=
100 V, 400 V, 600 V, 1000 V
Peak One Cycle Surge Forward Current (non repetitive):
I
FSM
=
180 A (50 Hz)
Maximum Ratings
(Ta
=
25°C)
Characteristics
3BZ41
Repetitive peak
reverse voltage
3GZ41
3JZ41
3NZ41
Average forward current (Ta
=
45°C)
Peak one cycle surge forward current
(non repetitive)
Junction temperature
Storage temperature range
I
F (AV)
I
FSM
T
j
T
stg
V
RRM
Symbol
Rating
100
400
600
1000
3.0
180 (50 Hz)
200 (60 Hz)
−40
to 150
−40
to 150
°C
°C
A
A
V
Unit
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Thermal resistance (junction to ambient)
Symbol
V
FM
I
RRM
R
th (j-a)
Test Condition
I
FM
=
3.0 A
V
RRM
=
Rated
DC
Min
Typ.
Max
1.0
10
37
Unit
V
µA
°C/W
Marking
Type Code Lot No.
Code
3BZ
JAPAN
Year (last number of the christian era)
Month (starting from alphabet A)
3BZ
3GZ
3JZ
Cathode Mark
Color: Silver
3NZ
Type
3BZ41
3GZ41
3JZ41
3NZ41
000707EAA2
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
2000-10-31
1/3

3NZ41 Related Products

3NZ41 3JZ41
Description DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD, Rectifier Diode DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, Rectifier Diode
Is it Rohs certified? incompatible incompatible
package instruction 3-6E1A, 2 PIN 3-6E1A, 2 PIN
Reach Compliance Code unknown unknown
Other features FORMED LEAD OPTIONS ARE AVAILABLE FORMED LEAD OPTIONS ARE AVAILABLE
application GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V
JEDEC-95 code DO-201AD DO-201AD
JESD-30 code O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 200 A 200 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) 240 240
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1000 V 600 V
Maximum reverse current 10 µA 10 µA
surface mount NO NO
Terminal surface TIN LEAD TIN LEAD
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
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