2N2919
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N2919J)
•
JANTX level (2N2919JX)
•
JANTXV level (2N2919JV)
•
JANS level (2N2919JS)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
•
Radiation testing (total dose) upon request
Applications
•
General purpose
•
Matched Dual transistors
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed TO-78 metal can
Also available in chip configuration
Chip geometry 0307
Reference document:
MIL-PRF-19500/355
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Power Dissipation, T
C
= 25°C
Derate linearly above 25°C
Operating Junction Temperature
Storage Temperature
Copyright 2002
Rev. H
•
Qualification Levels: JAN, JANTX,
JANTXV and JANS
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
Rating
60
70
5
50
300 one section
600 both sections
1.71one section
3.43 both sections
750 one section
1.5 both sections
4.286 one section
7.14 both sections
-65 to +200
Unit
Volts
Volts
Volts
mA
mW
mW/°C
MW
W
mW/°C
°C
P
T
T
J
T
STG
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N2919
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE2-1
/h
FE2-2
|V
BE1
-V
BE2
|
1
|V
BE1
-V
BE2
|
2
|V
BE1
-V
BE2
|
3
|V
BE1
-V
BE2
|
1
|V
BE1
-V
BE2
|
2
V
BEsat1
V
CEsat1
Test Conditions
I
C
= 10
µA,
V
CE
= 5 Volts
I
C
= 100
µA,
V
CE
= 5 Volts
I
C
= 1 mA, V
CE
= 5 Volts
I
C
= 10
µA,
V
CE
= 5 Volts
T
A
= -55°C
I
C
= 100
µA,
V
CE
= 5 Volts
V
CE
= 5 Volts, I
C
= 10
µA
V
CE
= 5 Volts, I
C
= 100
µA
V
CE
= 5 Volts, I
C
= 1 mA
V
CE
= 5 Volts, I
C
= 100
µA
T
A
= 25
°C
and -55°C
T
A
= 25
°C
and +125°C
I
C
= 1 mA, I
B
= 100
µA
I
C
= 1 mA, I
B
= 100
µA
Symbol
V
(BR)CEO
I
CBO1
I
CBO2
I
CBO3
I
CEO
I
EBO1
I
EBO2
Test Conditions
I
C
= 10 mA
V
CB
= 70 Volts
V
CB
= 45 Volts
V
CB
= 45 Volts, T
A
= 150°C
V
CE
= 5 Volts
V
EB
= 6 Volts
V
EB
= 5 Volts
Min
60
10
2
2.5
2
10
2
Min
60
100
150
20
0.9
Typ
Max
240
325
600
1.0
5
3
5
0.8
1
1.0
0.3
Typ
Max
Units
Volts
µA
nA
µA
nA
µA
nA
Units
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Base-Emitter Voltage differential
Base-Emitter Voltage differential
at temperature
Base-Emitter Saturation Voltage
Collector-Emitter Saturation
Voltage
Dynamic Characteristics
mVolts
mVolts
Volts
Volts
0.5
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Symbol
|h
FE1
|
h
FE
C
OBO
Noise Figure
Short Circuit Input Impedance
Open Circuit Output Admittance
Open Circuit reverse Voltage Transfer
Ratio
Copyright 2002
Rev. H
NF
1
NF
2
NF
3
h
ie
h
oe
h
re
Test Conditions
V
CE
= 5 Volts, I
C
= 500
µA,
f = 20 MHz
V
CE
= 10 Volts, I
C
= 1 mA,
f = 1 kHz
V
CB
= 5 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
CE
= 5 Volts, I
C
= 10
µA,
R
g
= 10 kΩ
f = 100 Hz
f = 1 kHz
f = 10 kHz
V
CB
=5V, I
C
=1mA, f =1kHz
V
CB
=5V, I
C
=1mA, f =1kHz
V
CB
=5V, I
C
=100µA, f=1kHz
Min
3
150
Typ
Max
20
600
5
Units
pF
3
5
3
3
30
60
1x10
-3
dB
kΩ
µmhos
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
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www.SEMICOA.com
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