22 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Zetex Semiconductors |
| package instruction | R-PDSO-G3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Other features | LOW NOISE |
| Minimum breakdown voltage | 25 V |
| Configuration | SINGLE |
| Diode Capacitance Tolerance | 20% |
| Minimum diode capacitance ratio | 5 |
| Nominal diode capacitance | 22 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Maximum power dissipation | 0.33 W |
| Certification status | Not Qualified |
| minimum quality factor | 200 |
| Maximum repetitive peak reverse voltage | 25 V |
| Maximum reverse current | 0.02 µA |
| Reverse test voltage | 20 V |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| Varactor Diode Classification | HYPERABRUPT |
| ZC832 | ZC832A | |
|---|---|---|
| Description | 22 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE | 22 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| Is it Rohs certified? | conform to | conform to |
| Maker | Zetex Semiconductors | Zetex Semiconductors |
| Reach Compliance Code | unknow | unknow |
| ECCN code | EAR99 | EAR99 |
| Other features | LOW NOISE | LOW NOISE |
| Minimum breakdown voltage | 25 V | 25 V |
| Configuration | SINGLE | SINGLE |
| Diode Capacitance Tolerance | 20% | 10% |
| Minimum diode capacitance ratio | 5 | 5 |
| Nominal diode capacitance | 22 pF | 22 pF |
| Diode component materials | SILICON | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609 code | e3 | e3 |
| Humidity sensitivity level | 1 | 1 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C |
| Minimum operating temperature | -55 °C | -55 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 |
| Maximum power dissipation | 0.33 W | 0.33 W |
| Certification status | Not Qualified | Not Qualified |
| minimum quality factor | 200 | 200 |
| Maximum repetitive peak reverse voltage | 25 V | 25 V |
| Maximum reverse current | 0.02 µA | 2e-8 µA |
| Reverse test voltage | 20 V | 20 V |
| surface mount | YES | YES |
| Terminal surface | Matte Tin (Sn) | Matte Tin (Sn) |
| Terminal form | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL |
| Maximum time at peak reflow temperature | 40 | 40 |
| Varactor Diode Classification | HYPERABRUPT | HYPERABRUPT |
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