BZD27C11PWH – BZD27C220PWH
Taiwan Semiconductor
1W, 11V - 220V Zener Diode
FEATURES
●
●
●
●
●
●
●
●
●
AEC-Q101 qualified
Silicon zener diodes
Low profile surface-mount package
Zener and surge current specification
Low leakage current
Excellent stability
Moisture sensitivity level: level 1, per J-STD-020
RoHS Compliant
Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
tot
T
J MAX
Package
Configuration
VALUE
11 - 220
5 - 50
1.0
175
UNIT
V
mA
W
°C
SOD-123W
Single die
APPLICATIONS
● Voltage regulating
● Reference voltage
● Protection circuit
MECHANICAL DATA
●
●
●
●
●
●
Case: SOD-123W
Molding compound meets UL 94V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.016g (approximately)
SOD-123W
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
= 0.2A
Power dissipation
Non-repetitive peak pulse power dissipation
100μs square pulse
(2)
SYMBOL
V
F
T
L
= 80°C
T
A
= 25°C
(1)
VALUE
1.0
2.3
1.0
300
150
100
- 55 to +175
- 55 to +175
UNIT
V
W
W
W
W
W
°C
°C
P
tot
P
ZSM
P
RSM
P
RSM
T
J
T
STG
Non-repetitive peak pulse power dissipation
10/1000μs waveform (BZD27C11PWH to BZD27C100PWH)
Non-repetitive peak pulse power dissipation
10/1000μs waveform (BZD27C110PWH to BZD27C220PWH)
Junction temperature
Storage temperature
Notes:
1. Mounted on Cu-Pad size 5mm x 5mm
2. T
J
= 25°C prior to surge
1
Version: A2103
BZD27C11PWH – BZD27C220PWH
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
SYMBOL
R
ӨJL
R
ӨJA
R
ӨJC
TYP
22
85
24
UNIT
°C/W
°C/W
°C/W
ORDERING INFORMATION
ORDERING CODE
(1)
BZD27CxPWH
PACKAGE
SOD-123W
PACKING
10,000 / Tape & Reel
Notes:
1. “x” defines voltage from 11V (BZD27C11PWH) to 220V (BZD27C220PWH)
2
Version: A2103
BZD27C11PWH – BZD27C220PWH
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Zener voltage
Part
number
Marking
code
Min
BZD27C11PWH
BZD27C12PWH
BZD27C13PWH
BZD27C15PWH
BZD27C16PWH
BZD27C18PWH
BZD27C20PWH
BZD27C22PWH
BZD27C24PWH
BZD27C27PWH
BZD27C30PWH
BZD27C33PWH
BZD27C36PWH
BZD27C39PWH
BZD27C43PWH
BZD27C47PWH
BZD27C51PWH
BZD27C56PWH
BZD27C62PWH
BZD27C68PWH
BZD27C75PWH
BZD27C82PWH
BZD27C91PWH
BZD27C100PWH
BZD27C110PWH
BZD27C120PWH
BZD27C130PWH
BZD27C150PWH
BZD27C160PWH
BZD27C180PWH
BZD27C200PWH
BZD27C220PWH
N2
N3
N4
N5
N6
N7
P0
P1
P3
P4
P5
P6
P7
P8
Q0
Q1
Q2
Q5
Q7
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
R11
R12
R13
10.5
11.4
12.4
14.3
15.2
17.1
19
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95
104.5
114
123.5
142.5
152
171
190
209
V
Z
@ I
ZT
V
Nom
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
Max
11.6
12.6
13.7
15.8
16.8
18.9
21
23.1
25.2
28.4
31.5
34.7
37.8
41
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.6
105
115.5
126
136.5
157.5
168
189
210
231
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
(1)
Test
current
I
ZT
mA
Regulator impedance
Z
ZT
@ I
ZT
Ω
Max
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
200
200
200
250
300
300
300
350
450
750
900
Z
ZK
@ I
ZK
Ω
Max
700
700
700
700
700
750
750
750
750
1000
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
4000
4500
5000
6000
6500
7000
8000
8500
Test
current
I
ZK
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Notes:
1. Pulse test with PW = 30ms
3
Version: A2103
BZD27C11PWH – BZD27C220PWH
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Zener voltage
Part number
Marking
code
Min
BZD27C11PWH
BZD27C12PWH
BZD27C13PWH
BZD27C15PWH
BZD27C16PWH
BZD27C18PWH
BZD27C20PWH
BZD27C22PWH
BZD27C24PWH
BZD27C27PWH
BZD27C30PWH
BZD27C33PWH
BZD27C36PWH
BZD27C39PWH
BZD27C43PWH
BZD27C47PWH
BZD27C51PWH
BZD27C56PWH
BZD27C62PWH
BZD27C68PWH
BZD27C75PWH
BZD27C82PWH
BZD27C91PWH
BZD27C100PWH
BZD27C110PWH
BZD27C120PWH
BZD27C130PWH
BZD27C150PWH
BZD27C160PWH
BZD27C180PWH
BZD27C200PWH
BZD27C220PWH
N2
N3
N4
N5
N6
N7
P0
P1
P3
P4
P5
P6
P7
P8
Q0
Q1
Q2
Q5
Q7
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
R11
R12
R13
10.5
11.4
12.4
14.3
15.2
17.1
19
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95
104.5
114
123.5
142.5
152
171
190
209
V
Z
@ I
ZT
V
Nom
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
Max
11.6
12.6
13.7
15.8
16.8
18.9
21
23.1
25.2
28.4
31.5
34.7
37.8
41
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.6
105
115.5
126
136.5
157.5
168
189
210
231
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
(1)
Temperature
Test
Clamping Voltage Leakage current coefficient of
current
Zener voltage
I
ZT
mA
Vc
V
Max
15.7
17.0
18.9
20.9
22.9
25.6
28.4
31.0
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
126
139
150
152
185
205
224
229
254
279
9.6
8.8
7.9
7.2
6.6
5.9
5.3
4.8
4.4
3.9
3.6
3.2
3.0
2.8
2.5
2.3
2.1
1.9
1.7
1.6
1.5
1.3
1.2
1.1
1.0
0.65
0.81
0.73
0.67
0.43
0.39
0.35
@I
RSM
A
(2)
I
R
@ V
R
µA
Max
4.0
3.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
(1)
αV
Z
@ I
ZT
mV/°C
Min
Max
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
V
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
Notes :
1. Pulse test with PW = 30ms
2. 10/1000µs waveform
4
Version: A2103
BZD27C11PWH – BZD27C220PWH
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Steady State Power Derating Curve
1000
BZD27C12PWH
BZD27C18PWH
1.0
CAPACITANCE (pF)
100
Fig.2 Typical Junction Capacitance
1.5
Ptot - Maximum Power Dissipation (W)
BZD27C36PWH
10
BZD27C220PWH
BZD27C75PWH
0.5
0.0
0
25
50
75
100
125
o
150
175
1
f=1.0MHz
0.1
1
10
100
AMBIENT TEMPERATURE ( C)
REVERSE VOLTAGE (V)
Fig.3 Typical Forward Characteristics
INSTANTANEOUS FORWARD CURRENT (A)
1
Fig.4 Typical Zener Impedance
10000
BZD27C220PWH
Zz - DYNAMIC IMPEDANCE (Ω)
BZD27C12PWH
0.1
BZD27C36PWH
BZD27C220PWH
0.01
1000
100
BZD27C18PWH
BZD27C75PWH
BZD27C36PWH
10
BZD27C12PWH
0.001
0.6
0.7
0.8
0.9
FORWARD VOLTAGE (V)
1
0.1
1
10
100
Iz - ZENER TEST CURRENT (mA)
5
Version: A2103
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