TSC5988CT A3G datasheet, PDF - EEWORLD Datasheet

TSC5988CT A3G: Description晶体管 - 双极 (BJT) - 单 NPN 60 V 5 A 130MHz 1 W 通孔 TO-92; CategoryDiscrete semiconductor The transistor; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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TSC5988CT A3G Overview

晶体管 - 双极 (BJT) - 单 NPN 60 V 5 A 130MHz 1 W 通孔 TO-92

Parameter Name	Attribute value
category
Maker	Taiwan Semiconductor
series	-
Package	带盒（TB）
Transistor type	NPN
Vce saturation voltage drop (maximum value) when Ib and Ic are different	350mV @ 200mA，5A
Current - collector cutoff (maximum)	50nA（ICBO）
DC current gain (hFE) (minimum value) when different Ic, Vce	120 @ 2A，1V
Frequency - Transition	130MHz
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	Through hole
Package/casing	TO-226-3, TO-92-3 (TO-226AA) (formed lead)
Supplier device packaging	TO-92
Current - Collector (Ic) (maximum)	5 A
Voltage - collector-emitter breakdown (maximum)	60 V
Power - Max	1 W

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