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BZX79C2V2 A0G

Description
二极管 - 齐纳 2.2 V 500 mW ±5% 通孔 DO-35
CategoryDiscrete semiconductor    diode   
File Size177KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZX79C2V2 A0G Overview

二极管 - 齐纳 2.2 V 500 mW ±5% 通孔 DO-35

BZX79C2V2 A0G Parametric

Parameter NameAttribute value
category
MakerTaiwan Semiconductor
series-
Package带盒(TB)
Voltage - Zener (nominal) (Vz)2.2 V
Tolerance±5%
Power - Max500 mW
Impedance (max) (Zzt)100 Ohms
Current at different Vr - reverse leakage150 µA @ 1 V
Voltage at different If - Forward (Vf)1.5 V @ 100 mA
Operating temperature-65°C ~ 175°C(TJ)
Installation typeThrough hole
Package/casingDO-204AH, DO-35, axial
Supplier device packagingDO-35
Basic product numberBZX79C2V2
BZX79C2V0 - BZX79C75
Taiwan Semiconductor
500mW, 5% Tolerance Zener Diodes
FEATURES
● Wide zener voltage range selection: 2.0V to 75V
● V
Z
tolerance selection of ± 5%
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
D
V
F
at I
F
=100mA
T
J
Max.
Package
Configuration
VALUE
2.0-75
5
500
1.5
175
DO-35
Single die
UNIT
V
mA
mW
V
°C
APPLICATIONS
Low voltage stabilizers or voltage references
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
Case: DO-35
Terminal: Matte tin plated leads, solderable per J-STD-002
Polarity: Indicated by cathode band
Weight: 109 ± 4 mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Power dissipation
Forward voltage
Junction temperature range
Storage temperature range
I
F
=100mA
SYMBOL
P
D
V
F
T
J
T
STG
VALUE
500
1.5
-65 to +175
-65 to +175
UNIT
mW
V
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction to ambient thermal resistance
SYMBOL
R
ӨJA
TYP
300
UNIT
°C/W
1
Version:F1804
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