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KTC3228Y

Description
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size482KB,3 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric Compare View All

KTC3228Y Overview

Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 PIN

KTC3228Y Parametric

Parameter NameAttribute value
MakerKEC
Parts packaging codeTO-92L
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
SEMICONDUCTOR
TECHNICAL DATA
COLOR TV VERT. DEFELECTION OUTPUT APPLICATION.
COLOR TV CLASS B SOUND OUTPUT APPLICATION.
B
KTC3228
EPITAXIAL PLANAR NPN TRANSISTOR
D
FEATURES
・High
Voltage : V
CEO
=160V.
・Large
Continuous Collector Current Capability.
・Recommended
for Vert. Deflection Output & Sound Output
Applications for Line Operated TV.
・Complementary
to KTA1275.
F
C
P
DEPTH:0.2
A
S
Q
K
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
MILLIMETERS
7.20 MAX
5.20 MAX
0.60 MAX
2.50 MAX
1.15 MAX
1.27
1.70 MAX
0.55 MAX
_
14.00 + 0.50
0.35 MIN
_
0.75 + 0.10
4
G
J
F
H
H
M
E
M
R
H
MAXIMUM RATING (Ta=25℃)
O
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
160
160
6
1
0.5
1
150
-55½150
UNIT
V
V
V
A
A
W
1
N
2
3
N
H
L
1. EMITTER
2. COLLECTOR
3. BASE
25
1.25
Φ1.50
0.10 MAX
_
12.50 + 0.50
1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
Classification
R:60½120
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(Note)
V
CE(sat)
V
BE
f
T
C
ob
0:100½200,
TEST CONDITION
V
CB
=150V, I
E
=0
V
EB
=6V, I
C
=0
I
C
=10mA, I
B
=0
V
CE
=5V, I
C
=200mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=5mA
V
CE
=5V, I
C
=200mA
V
CB
=10V, I
E
=0, f=1MHz
Y:160½320
MIN.
-
-
160
60
-
0.45
20
-
TYP.
-
-
-
-
-
-
100
-
MAX.
1.0
1.0
-
320
1.5
0.75
-
20
V
V
MHz
pF
UNIT
μ
A
μ
A
V
2008. 4. 16
Revision No : 2
D
1/3

KTC3228Y Related Products

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Description Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 PIN
Maker KEC KEC KEC
Parts packaging code TO-92L TO-92L TO-92L
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A
Collector-emitter maximum voltage 160 V 160 V 160 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 160 60 100
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 1 W 1 W 1 W
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz
Base Number Matches 1 1 1
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