BTS114-E3046 datasheet, PDF - EEWORLD Datasheet

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BTS114-E3046: DescriptionPower Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size197KB，9 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BTS114-E3046 Overview

Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

BTS114-E3046 Parametric

Parameter Name	Attribute value
Maker	SIEMENS
Parts packaging code	TO-220AB
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	14 A
Maximum drain-source on-resistance	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	200 pF
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	40 W
Maximum pulsed drain current (IDM)	56 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	200 ns
Maximum opening time (tons)	105 ns
Base Number Matches	1

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BTS114-E3046 Related Products

	BTS114-E3046	135R-2802-AT90	BTS114-E3044
Description	Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN	Fixed Resistor, Wire Wound, 3W, 28000ohm, 140V, 0.05% +/-Tol, 90ppm/Cel,	Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN
Reach Compliance Code	unknown	compliant	unknown
ECCN code	EAR99	EAR99	EAR99
Number of terminals	3	2	3
Maximum operating temperature	150 °C	350 °C	150 °C
Package shape	RECTANGULAR	TUBULAR PACKAGE	RECTANGULAR
Package form	IN-LINE	Axial	SMALL OUTLINE
Maker	SIEMENS	-	SIEMENS
Parts packaging code	TO-220AB	-	TO-220AB
package instruction	IN-LINE, R-PSIP-T3	-	SMALL OUTLINE, R-PSSO-G3
Contacts	3	-	3
Shell connection	DRAIN	-	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR	-	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Minimum drain-source breakdown voltage	50 V	-	50 V
Maximum drain current (ID)	14 A	-	14 A
Maximum drain-source on-resistance	0.1 Ω	-	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	200 pF	-	200 pF
JESD-30 code	R-PSIP-T3	-	R-PSSO-G3
Number of components	1	-	1
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Polarity/channel type	N-CHANNEL	-	N-CHANNEL
Maximum power consumption environment	40 W	-	40 W
Maximum pulsed drain current (IDM)	56 A	-	56 A
Certification status	Not Qualified	-	Not Qualified
surface mount	NO	-	YES
Terminal form	THROUGH-HOLE	-	GULL WING
Terminal location	SINGLE	-	SINGLE
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON
Maximum off time (toff)	200 ns	-	200 ns
Maximum opening time (tons)	105 ns	-	105 ns
Base Number Matches	1	-	1

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