TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/423
Devices
2N5581
2N5582
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
op
,
T
stg
Value
50
75
6.0
800
0.5
2.0
-55 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0
C
@ T
A
= 25
0
C
(1)
@ T
C
= 25
0
C
(2)
Operating & Storage Junction Temperature Range
1) Derate linearly 2.86 mW/
0
C for T
A
> 25
0
C
2) Derate linearly 11.43 mW/
0
C for T
C
> 25
0
C
TO-46*
(TO-206AB)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
I
CBO
Min.
50
10
10
10
10
Max.
Unit
Vdc
ηAdc
µAdc
ηAdc
µAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
V
CB
= 75 Vdc
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
V
EB
= 6.0Vdc
I
EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N5581, 2N5582 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 0.1 mAdc, V
CE
= 10 Vdc
I
C
=1.0 m Adc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 500 mAdc, V
CE
= 10 Vdc
I
C
= 0.1 mAdc, V
CE
= 10 Vdc
I
C
=1.0 m Adc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 500 mAdc, V
CE
= 10 Vdc
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
Base-Emitter Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
2N5581
h
FE
30
35
40
40
20
50
75
100
100
30
120
2N5582
h
FE
300
V
CE(sat)
0.3
1.0
0.6
1.2
2.0
Vdc
V
BE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
Forward Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 20 Vdc, f = 100 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Input Capacitance
V
EB
= 0.5 Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz
2N5581
2N5582
h
fe
30
50
2.5
8.0
25
pF
pF
h
fe
C
obo
C
ibo
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 150 mAdc; I
B1
=
15 mAdc
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 150 mAdc; I
B1
=
I
B2
=
15 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
t
on
35
300
ηs
ηs
t
off
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
Embedded System
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