EEWORLDEEWORLDEEWORLD

Part Number

Search

2N2218

Description
晶体管 - 双极 (BJT) - 单 NPN 30 V 800 mA - 800 mW 通孔 TO-39(TO-205AD)
CategoryDiscrete semiconductor    The transistor   
File Size162KB,4 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

2N2218 Online Shopping

Suppliers Part Number Price MOQ In stock  
2N2218 - - View Buy Now

2N2218 Overview

晶体管 - 双极 (BJT) - 单 NPN 30 V 800 mA - 800 mW 通孔 TO-39(TO-205AD)

2N2218 Parametric

Parameter NameAttribute value
category
MakerMicrochip
series-
PackageBulk
Transistor typeNPN
Current - Collector (Ic) (maximum)800 mA
Voltage - collector-emitter breakdown (maximum)30 V
Vce saturation voltage drop (maximum value) when Ib and Ic are different1.6V @ 50mA,500mA
Current - collector cutoff (maximum)10nA
DC current gain (hFE) (minimum value) when different Ic, Vce40 @ 150mA,10V
Power - Max800 mW
Frequency - Transition-
Operating temperature-55°C ~ 200°C(TJ)
Installation typeThrough hole
Package/casingTO-205AD, TO-39-3 metal can
Supplier device packagingTO-39(TO-205AD)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN-SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
DEVICES
LEVELS
2N2218
2N2218A
2N2218AL
2N2219
2N2219A
2N2219AL
See datasheet for JANSR2N2218 &
JAN
JANTX
JANTXV
JANS *
*
Also available in Radiation Hardened versions.
JANSR2N2219
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
@ T
A
= +25°C
@ T
C
= +25°C
Operating & Storage Junction Temp. Range
Total Power Dissipation
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Case
Symbol
R
θJC
Value
59
Unit
°C/W
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
op
, T
stg
2N2218
2N2219
30
60
5.0
2N221A; L
2N2219A; L
50
75
6.0
800
0.8
3.0
-55 to +200
Unit
Vdc
Vdc
Vdc
mA
W
W
°C
TO-39 (TO-205AD)
2N2218, 2N2218A
2N2219, 2N2219A
Note:
(1) Derate linearly 4.6mW/°C above T
A
> +25°C
(2) Derate linearly 17.0mW/°C above T
C
> +25°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
E
= 10mAdc
2N2218; 2N2219
2N2218A; 2N2219A / AL
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
V
EB
= 6.0Vdc
V
EB
= 4.0Vdc
Collector-Base Cutoff Current
V
CE
= 30Vdc
V
CE
= 50Vdc
2N2218; 2N2219
2N2218A; 2N2219A / AL
All Types
2N2218; 2N2219
2N2218A; 2N2219A / AL
V
(BR)CEO
30
50
10
10
10
10
10
Vdc
TO-5
2N2218AL
2N2219AL
Symbol
Min.
Max.
Unit
I
EBO
μAdc
ηAdc
I
CES
ηAdc
T4-LDS-0091 Rev. 2 (101484)
Page 1 of 4

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 7  319  1430  1807  1693  1  7  29  37  35 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号