HERAF1603G ........ HERAF1608G
16.0 Amp. Glass Passivated Ultrafast Rectifiers
ITO-220AC
Voltage
200 to 1000 V
Current
16.0 A
• Glass passivated chip junction.
• High efficiency, Low VF
• High current capability
• High reliability
• High surge current capability
• For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
1
2
PIN 1
PIN 2
CASE
Case Positive
MECHANICAL DATA
• Cases: ITO-220AC Molded plastic
• Epoxy: UL 94V0 rate flame retardant
• Terminals: Pure tin plated, lead free solderable per
MIL-STD-202, Method 208 guaranteed
• Polarity: As marked
• High temperature soldering guaranteed:
260 °C/10 seconds, 6.35mm from case.
• Mounting torque: 5 in - 1bs. Max.
• Weight: 2.24 grams
Absolute Maximum Ratings, according to IEC publication No. 134
HERAF
1603G
V
RRM
V
RMS
V
DC
I
F(AV)
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum Average Forward Rectified Current
@ T
c
= 100 ºC
Peak Forward Surge Current 8.3 ms. single
Half Sine-wave Superimposed on Rated
Load (JEDEC Method)
Maximum Reverse Recovery Time From
I
F
=0.5 A; I
R
= 1 A; I
RR
= 0.25 A
HERAF
1605G
HERAF
1606G
HERAF
1607G
HERAF
1608G
200
140
200
400
280
400
600
420
600
16 A
250 A
800
560
800
1000
700
1000
I
FSM
T
rr
Cj
T
j
T
stg
50 nS
150 pF
80 nS
110 pF
– 65 to + 150 °C
– 65 to + 150 °C
Typical Junction Capacitance at 1MHz
and reverse voltage of 4VDC
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics
HERAF
1603G
V
F
I
R
R
thj-c
Max. Instantaneous Forward Voltage @16.0 A
Maximum DC Reverse Current @ T
A
= 25 ºC
at Rated DC Blocking Voltage @ T
A
= 125 ºC
Typical Thermal Resistance (Note 1)
HERAF
1605G
HERAF
1606G
HERAF
1607G
HERAF
1608G
1.0 V
1.3 V
10 µA
400 µA
2.0 °C/W
1.7 V
Note: 1. Mounted on Heatsink Size of 50.8 mm x 76.2 mm x 6.35 mm Al-Plate.
Jun - 09
HERAF16G
Rating And Characteristic Curves
MAXIMUM FORWARD CURRENT DERATING
CURVE
I
F
, instantaneous forward current (A)
I
F(AV)
, average forward current (A)
20
16
12
8
4
0
0
50
100
30
10
3
10
3
0.1
0.03
0.01
0.4
0.6
0.8
1.0
1.2
T
j
= 25 °C
Pulse Width=300 µs
1% Duty Cycle
3G
60
F1
RA
8G
5G
HE
60
160
F1
AF
R
RA
-HE
HE
06G
F16
RA
HE
TYPICAL FORWARD CHARACTERISTICS
100
150
1.4
1.6
1.8
T
C
, case temperature (°C)
V
F
, forward voltage (V)
MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
I
FSM
, peak forward surge current (A)
250
300
T
j
= 25 °C
8.3ms Single Half Sine Wawe
JEDEC Method
TYPICAL JUNCTION CAPACITANCE
C
j
, junction capacitance (pF)
200
150
100
50
0
250
T
j
= 25 °C
200
150
100
50
0
HE
RA
F1
HE
RA
F
16
03
G-
HE
RA
F
60
6G
16
05
G
-H
ER
AF
16
08
G
1
2
5
10
20
50
100
1
2
5
10
20
50 100 200
500 1000
Number of cycles at 60 Hz
V
R
, reverse voltage (V)
TYPICAL REVERSE CHARACTERISTICS
PER LEG
I
R
, Instantaneous reverse current (µA)
1000
T
j
= 125 °C
REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NON INDUCTIVE
10W
NON INDUCTIVE
trr
+0.5A
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
100
10
T
j
= 25 °C
(+)
50Vdc
(approx)
(-)
DUT
0
-0.25A
1
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
-1.0A
NOTES: 1. Rise Time = 7ns max. Input Impedance =
1 megohm 22 pf
2. Rise Time = 10 ns max. Sourse Impedance =
50 ohms
1cm
SET TIME BASE FOR
5/ 10ns/ cm
0.1
0
20
40
60
80
100
120
140
Percent of rated peak reverse voltage (%)
Jun - 09
Embedded System
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