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KST64S62Z

Description
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size52KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KST64S62Z Overview

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon

KST64S62Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)20000
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)125 MHz
Base Number Matches1
KST63/64
KST63/64
Darlington Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
Value
-30
-30
-10
-500
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CES
I
CBO
I
EBO
h
FE
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
: KST63
: KST64
: KST63
: K ST64
V
CE
(sat)
V
BE
(on)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -100mA
I
C
= -100mA, I
B
= -0.1mA
V
CE
= -5V, I
C
= -100mA
V
CE
= -5V, I
C
= -10mA
f=100MHz
125
5K
10K
10K
20K
-1.5
-2.0
V
V
MHz
Test Condition
I
C
= -100, V
BE
=0
V
CE
= -30V, I
E
=0
V
EB
= -10V, I
C
=0
Min.
-30
Max.
-100
-100
Units
V
nA
nA
* Pulse test: PW≤300µs, Duty Cycle≤2%
Marking Code
Type
Mark
KST63
2U
KST64
2V
Marking
2U
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001

KST64S62Z Related Products

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Description Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
Maker Fairchild Fairchild Fairchild Fairchild Fairchild Fairchild
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 30 V 30 V 30 V 30 V 30 V 30 V
Configuration DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 20000 20000 20000 10000 10000 10000
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 125 MHz 125 MHz 125 MHz 125 MHz 125 MHz 125 MHz
Base Number Matches 1 1 1 1 - -
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