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BAS21J

Description
Rectifier Diode, 1 Element, 0.25A, 300V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size60KB,10 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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BAS21J Overview

Rectifier Diode, 1 Element, 0.25A, 300V V(RRM), Silicon

BAS21J Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSC-90, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage300 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
Base Number Matches1
BAS21J
Single high-speed switching diode
Rev. 01 — 8 March 2007
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, encapsulated in a SOD323F (SC-90) very small and
flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
High switching speed: t
rr
50 ns
I
Low leakage current
I
Repetitive peak reverse voltage:
V
RRM
300 V
I
Excellent coplanarity and improved
thermal behavior
I
Low capacitance: C
d
2 pF
I
Reverse voltage: V
R
300 V
I
Very small and flat lead SMD plastic
package
1.3 Applications
I
High-speed switching
I
General-purpose switching
I
Voltage clamping
I
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
I
F
I
R
V
R
t
rr
[1]
[2]
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
[2]
Conditions
[1]
Min
-
-
-
-
Typ
-
-
-
-
Max
250
150
300
50
Unit
mA
nA
V
ns
V
R
= 250 V
Pulse test: t
p
300
µs; δ ≤
0.02.
When switched from I
F
= 30 mA to I
R
= 30 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA.
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