BCW61C-TAPE-7 datasheet, PDF - EEWORLD Datasheet

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BCW61C-TAPE-7: DescriptionTRANSISTOR 200 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size59KB，4 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BCW61C-TAPE-7 Overview

TRANSISTOR 200 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

BCW61C-TAPE-7 Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	180 MHz
Maximum off time (toff)	800 ns
Maximum opening time (tons)	150 ns
VCEsat-Max	0.55 V
Base Number Matches	1

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package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	-
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	-
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	-
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	-
Maximum collector current (IC)	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	-
Collector-emitter maximum voltage	32 V	32 V	32 V	32 V	32 V	32 V	32 V	-
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-
Minimum DC current gain (hFE)	100	60	100	110	110	80	80	-
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	-
Number of components	1	1	1	1	1	1	1	-
Number of terminals	3	3	3	3	3	3	3	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
surface mount	YES	YES	YES	YES	YES	YES	YES	-
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	-
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-
Nominal transition frequency (fT)	180 MHz	180 MHz	180 MHz	180 MHz	180 MHz	180 MHz	180 MHz	-
Maximum off time (toff)	800 ns	800 ns	800 ns	800 ns	800 ns	800 ns	800 ns	-
Maximum opening time (tons)	150 ns	150 ns	150 ns	150 ns	150 ns	150 ns	150 ns	-
VCEsat-Max	0.55 V	0.55 V	0.55 V	0.55 V	0.55 V	0.55 V	0.55 V	-
Maker	-	NXP	NXP	NXP	NXP	NXP	NXP	-

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