EEWORLDEEWORLDEEWORLD

Part Number

Search

ZC836

Description
100 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size17KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

ZC836 Overview

100 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

ZC836 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionR-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Minimum breakdown voltage25 V
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Minimum diode capacitance ratio5
Nominal diode capacitance100 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.33 W
Certification statusNot Qualified
minimum quality factor100
Maximum repetitive peak reverse voltage25 V
Maximum reverse current2e-8 µA
Reverse test voltage20 V
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Varactor Diode ClassificationHYPERABRUPT
SOT23 SILICON VARIABLE
CAPACITANCE DIODES
ISSUE 5 – JANUARY 1998
FEATURES
* Close Tolerance C-V Characteristics
* High Tuning Ratio
* Low I
R
Enabling Excellent Phase Noise Performance
(I
R
Typically <200pA at 25V)
ZC830/A/B
to
ZC836/A/B
1
1
3
2
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Forward Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
I
F
P
tot
T
j
:T
stg
MAX
200
330
SOT23
UNIT
mA
mW
°C
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
=25°C)
PARAMETER
Reverse Breakdown
Voltage
Reverse Voltage Leakage
Temperature Coefficient
of Capacitance
SYMBOL
V
BR
I
R
MIN
25
0.2
0.03
10
0.04
TYP
MAX
UNIT CONDITIONS
V
nA
%/°C
I
R
=10
µ
A
V
R
=20V
V
R
=3V, f=1MHz
η
TUNING CHARACTERISTICS (at T
amb
=25°C)
PART NO
Nominal Capacitance (pF)
V
R
=2V, f=1MHz
MIN
ZC830A
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
ZC836A
9.0
13.5
19.8
29.7
42.3
61.2
90.0
NOM
10.0
15.0
22.0
33.0
47.0
68.0
100.0
MAX
11.0
16.5
24.2
36.3
51.7
74.8
110.0
Minimum
Q
@ V
R
=3V
f=50MHz
300
300
200
200
200
100
100
Capacitance Ratio
C
2
/ C
20
at f=1MHz
MIN
4.5
4.5
5.0
5.0
5.0
5.0
5.0
MAX
6.0
6.0
6.5
6.5
6.5
6.5
6.5
Note:
No suffix
±
20% (e.g. ZC830), suffix B
±
5% (e.g. ZC830B)
Spice parameter data is available upon request for this device

ZC836 Related Products

ZC836 ZC836A
Description 100 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE 100 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Is it Rohs certified? conform to conform to
Maker Zetex Semiconductors Zetex Semiconductors
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Minimum breakdown voltage 25 V 25 V
Configuration SINGLE SINGLE
Diode Capacitance Tolerance 20% 10%
Minimum diode capacitance ratio 5 5
Nominal diode capacitance 100 pF 100 pF
Diode component materials SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Maximum power dissipation 0.33 W 0.33 W
Certification status Not Qualified Not Qualified
minimum quality factor 100 100
Maximum repetitive peak reverse voltage 25 V 25 V
Maximum reverse current 2e-8 µA 2e-8 µA
Reverse test voltage 20 V 20 V
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
Varactor Diode Classification HYPERABRUPT HYPERABRUPT
About Slope Sports
1. No slope movement[/font][/color][/align][align=left][color=rgb(0, 0, 0)][font=PingFangSC-Light, 微软雅黑, 微软雅黑, "]The only parameter involved is VMAX. [/font][/color][/align][align=center][color=rgb(0,...
智联微科 Motor Drive Control(Motor Control)
How to set a hotkey to start a specific program?
I use 2440, wince4.2, the application is written and functions normally, and it also has a 4×4 keyboard (the keyboard is also debugged). Now the application is launched through the touch screen, and n...
tassadar Embedded System
The RTC of stm32F205 has a bug, the date is read as August 0, has anyone encountered this?
This is the stm32f2xx_RTC.c that comes with the library. Single-step simulation found that tmpreg = 0x00170800. The calculated date is August 0, 2017. The correct date is July 31st. The other times, h...
江枫三号楼 MCU
LPC1768+DP83848 can not be adjusted
Could you please help me check if there is any problem with the schematic diagram? I can run the RT-Thread network program normally on the development board, but it does not work when I get it to the ...
yuiasuna NXP MCU
Looking for single-cell lithium battery (3.7V) protection chip
Looking for a single-cell lithium battery (3.7V) protection chipLooking for a single-cell lithium battery (3.7V) protection chip, package SOT23, cannot be larger than this package.Over-discharge prote...
QWE4562009 Discrete Device
MSP430F149 failed to initialize DS18B20!
[size=3]Why does it fail when initializing DS18B20! [/size] [size=3][img=332,104]data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAA7kAAADtCAYAAAB6ULK8AAAAAXNSR0IArs4c6QAAAARnQU1BAACxjwv8YQUAAAAJcEhZcwAAD...
梦想时刻 Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1733  1547  1863  1310  987  35  32  38  27  20 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号