ZC836B datasheet, PDF - EEWORLD Datasheet

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ZC836B: Description100 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE; CategoryDiscrete semiconductor diode; File Size17KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZC836B Overview

100 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

ZC836B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	R-PDSO-G3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOW NOISE
Minimum breakdown voltage	25 V
Configuration	SINGLE
Diode Capacitance Tolerance	5%
Minimum diode capacitance ratio	5
Nominal diode capacitance	100 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.33 W
Certification status	Not Qualified
minimum quality factor	100
Maximum repetitive peak reverse voltage	25 V
Maximum reverse current	2e-8 µA
Reverse test voltage	20 V
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Varactor Diode Classification	HYPERABRUPT

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SOT23 SILICON VARIABLE

CAPACITANCE DIODES

ISSUE 5 – JANUARY 1998

FEATURES

* Close Tolerance C-V Characteristics

* High Tuning Ratio

* Low I

R

Enabling Excellent Phase Noise Performance

(I

R

Typically <200pA at 25V)

ZC830/A/B

to

ZC836/A/B

1

3

2

3

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Forward Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

I

F

P

tot

T

j

:T

stg

MAX

200

330

SOT23

UNIT

mA

mW

°C

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

=25°C)

PARAMETER

Reverse Breakdown

Voltage

Reverse Voltage Leakage

Temperature Coefficient

of Capacitance

SYMBOL

V

BR

I

R

MIN

25

0.2

0.03

10

0.04

TYP

MAX

UNIT CONDITIONS

V

nA

%/°C

I

R

=10

µ

A

V

R

=20V

V

R

=3V, f=1MHz

η

TUNING CHARACTERISTICS (at T

amb

=25°C)

PART NO

Nominal Capacitance (pF)

V

R

=2V, f=1MHz

MIN

ZC830A

ZC831A

ZC832A

ZC833A

ZC834A

ZC835A

ZC836A

9.0

13.5

19.8

29.7

42.3

61.2

90.0

NOM

10.0

15.0

22.0

33.0

47.0

68.0

100.0

MAX

11.0

16.5

24.2

36.3

51.7

74.8

110.0

Minimum

Q

@ V

R

=3V

f=50MHz

300

200

100

Capacitance Ratio

C

2

/ C

20

at f=1MHz

MIN

4.5

5.0

MAX

6.0

6.5

Note:

No suffix

±

20% (e.g. ZC830), suffix B

±

5% (e.g. ZC830B)

Spice parameter data is available upon request for this device

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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