Silicon PIN Diodes
BXY 42BA-S
BXY 42BB-S
Beam lead version
q
Fast switching
q
ESD: Electrostatic discharge
sensitive device, observe handling precautions!
Type
BXY 42BA-S
BXY 42BB-S
Marking
–
Ordering Code
Q62702-X151
Q62702-X159
Pin Configuration
Pointed cathode
Package
1)
S
Maximum Ratings
Parameter
Reverse voltage
Junction temperature
Storage temperature range
Operating temperature range
Symbol
BXY 42BA-S
V
R
T
j
T
stg
T
op
50
175
– 55 … + 150
– 55 … + 150
Values
BXY 42BB-S
30
V
˚C
Unit
1)
For detailed information see chapter Package Outlines.
BXY 42BA-S
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Breakdown voltage
I
R
= 10
µ
A
Forward voltage
I
F
= 50 mA
Reverse current
V
R
= 40 V
Storage time
I
F
= 10 mA,
V
R
= 10 V
Diode capacitance
V
R
= 30 V,
f
= 1 MHz
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA
Forward resistance
f
= 100 MHz,
I
F
= 10 mA
Symbol
min.
V
(BR)
V
F
I
R
t
s
C
T
τ
L
Values
typ.
–
1.0
–
3
–
30
1.8
max.
–
–
5
–
0.08
–
–
50
–
–
–
–
–
–
Unit
V
nA
ns
pF
ns
Ω
r
f
BXY 42BA-S
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Breakdown voltage
I
R
= 10
µ
A
Forward voltage
I
F
= 50 mA
Reverse current
V
R
= 20 V
Storage time
I
F
= 10 mA,
V
R
= 10 V
Diode capacitance
V
R
= 20 V,
f
= 1 MHz
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA
Forward resistance
f
= 100 MHz,
I
F
= 10 mA
Symbol
min.
V
(BR)
V
F
I
R
t
s
C
T
τ
L
Values
typ.
–
1.1
–
2
–
20
1.3
max.
–
–
5
–
0.15
–
–
30
–
–
–
–
–
–
Unit
V
nA
ns
pF
ns
Ω
r
f
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