High Frequency FETs
3SK273
GaAs N-Channel MES FET
For VHF-UHF amplification
unit: mm
+0.2
2.8
–0.3
M
Di ain
sc te
on na
tin nc
ue e/
d
s
Features
0.65±0.15
2.9±0.2
1.9±0.2
1.5
–0.3
+0.2
0.65±0.15
s
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Symbol
Drain to Source voltage
V
DS
13
Gate 1 to Source voltage
Gate 2 to Source voltage
Drain current
V
G1S
V
G2S
I
D
I
G1
I
G2
P
D
Gate 1 current
Gate 2 current
Allowable power dissipation
Channel temperature
Storage temperature
T
ch
T
stg
s
Electrical Characteristics
(Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current
Gate 2 to Drain current
Gate 1 cut-off current
Gate 2 cut-off current
Drain cut-off current
I
DSS*
I
G1SS
I
G2SS
I
DSX
ue
I
G2DO
e/
D
Gate 1 to Source cut-off voltage
Gate 2 to Source cut-off voltage
V
G1SC
V
G2SC
| Y
fs
|
C
oss
PG
NF
G
R
Forward transfer admittance
Input capacitance (Common Source) C
iss
nt
Output capacitance (Common Source)
ai
Power gain
Noise figure
Gain reduction
ea
Reverse transfer capacitance (Common Source) C
rss
M
Pl
*
I
DSS
rank classification
Rank
I
DSS
(mA)
P
8.5 to 17
ETP
Q
15 to 21
ETQ
R
19 to 30
ETR
R
25 to 35
ETS
Marking Symbol
pl d in
an c
se
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
0.5R
0.95
4
1
0.95
3
2
+0.2
1.1
–0.1
q
Low noise-figure (NF)
q
Large power gain PG
q
Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
V
V
V
−6
−6
50
1
1
mA
mA
mA
1: Source
2: Drain
3: Gate2
4: Gate1
Mini Type Package (4-pin)
200
150
mW
°C
°C
Marking Symbol (Example): ET
−55
to +150
Conditions
min
8.5
typ
0 to 0.1
0.4±0.2
0.8
max
35
50
V
DS
= 5V, V
G1S
= 0, V
G2S
= 0
V
DD
=
−13V
(G1, S = Open)
V
DS
= V
G2S
= 0, V
G1S
=
−6V
V
DS
= V
G1S
= 0, V
G2S
=
−6V
in
−20
−20
50
co
nt
V
DS
= 13V, V
G1S
=
−3.5V,
V
G2S
= 0
V
DS
= 5V, V
G2S
= 0, I
D
= 200µA
V
DS
= 5V, V
G1S
= 0, I
D
= 200µA
is
−3.5
−3.5
0.16
–0.06
Ratings
Unit
+0.1
Unit
mA
µA
µA
µA
µA
V
V
nc
V
DS
= 5V, I
D
= 10mA, V
G2S
= 1.5V, f = 1kHz
V
DS
= 5V, V
G1S
= V
G2S
=
−6V
f = 1MHz
15
20
mS
pF
pF
pF
en
a
0.4
0.3
2
1.2
0.02
16
1.8
0.04
V
DS
= 5V, I
D
= 10mA
V
G2S
= 1.5V, f = 800MHz
13
dB
2.8
dB
dB
V
DS
= 5V, V
AGC
= 1.5V/−3.5V, f = 800MHz
37
45
0.4
–0.05
+0.1
1
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semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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