2N2484UB
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N2484UBJ)
•
JANTX level (2N2484UBJX)
•
JANTXV level (2N2484UBJV)
•
JANS level (2N2484UBJS)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
•
Radiation testing (total dose) upon request
Applications
•
General purpose
•
Low power
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 0307
Reference document:
MIL-PRF-19500/376
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
•
Qualification Levels: JAN, JANTX,
JANTXV and JANS
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
Rating
60
60
6
50
360
2.06
325
-65 to +200
-65 to +200
Unit
Volts
Volts
Volts
mA
mW
mW/°C
°C/W
°C
°C
R
θJA
T
J
T
STG
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N2484UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
V
(BR)CEO
I
CBO1
I
CBO2
I
CBO3
I
CEO
I
CES
I
EBO1
I
EBO2
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
h
FE7
V
BE
V
CEsat1
Symbol
|h
FE
|
1
|h
FE
|
2
h
FE
C
OBO
C
IBO
Test Conditions
I
C
= 10 mA
V
CB
= 60 Volts
V
CB
= 45 Volts
V
CB
= 45 Volts, T
A
= 150°C
V
CE
= 5 Volts
V
CE
= 45 Volts
V
EB
= 6 Volts
V
EB
= 5 Volts
Test Conditions
I
C
= 1
µA,
V
CE
= 5 Volts
I
C
= 10
µA,
V
CE
= 5 Volts
I
C
= 100
µA,
V
CE
= 5 Volts
I
C
= 500
µA,
V
CE
= 5 Volts
I
C
= 1 mA, V
CE
= 5 Volts
I
C
= 10 mA, V
CE
= 5 Volts
I
C
= 10
µA,
V
CE
= 5 Volts
T
A
= -55°C
V
CE
= 5 Volts, 100
µA
I
C
= 1 mA, I
B
= 100
µA
Test Conditions
V
CE
= 5 Volts, I
C
= 50
µA,
f = 5 MHz
V
CE
= 5 Volts, I
C
= 500
µA,
f = 30 MHz
V
CE
= 5 Volts, I
C
= 1 mA,
f = 1 kHz
V
CB
= 5 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
V
CE
= 5 Volts, I
C
= 10
µA,
R
g
= 10 kΩ
f = 100 Hz
f = 1 kHz
f = 10 kHz
V
CE
= 5 Volts, I
C
= 10
µA,
R
g
= 10 kΩ,
10Hz < Noise BW <15.7kHz
V
CB
= 5V, I
C
= 1mA, f = 1kHz
Min
60
Typ
Max
10
5
10
2
5
10
2
Units
Volts
µA
nA
µA
nA
nA
µA
nA
Units
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
Min
45
200
225
250
250
225
35
0.5
Typ
Max
500
675
800
800
800
DC Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
0.7
0.3
Typ
Max
Volts
Volts
Units
Min
3
2
250
7
900
5
6
pF
pF
Noise Figure
NF
1
NF
2
NF
3
NF
4
h
ie
h
oe
h
re
7.5
3
2
3
24
40
8x10
-4
dB
Noise Figure (wideband)
Short Circuit Input Impedance
Open Circuit Output Admittance
Open Circuit Rev Volt Transfer Ratio
Copyright 2002
Rev. F
dB
kΩ
µmhos
3.5
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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