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M29F800FT55N3E2

Description
FLASH - NOR 存储器 IC 8Mb(1M x 8,512K x 16) 并联 55 ns 48-TSOP
Categorysemiconductor    memory   
ManufacturerAlliance Memory
Environmental Compliance
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M29F800FT55N3E2 Overview

FLASH - NOR 存储器 IC 8Mb(1M x 8,512K x 16) 并联 55 ns 48-TSOP

M29F800FT55N3E2 Parametric

Parameter NameAttribute value
category
MakerAlliance Memory
seriesAutomotive, AEC-Q100
Packagetray
memory typenon-volatile
memory formatflash memory
technologyFLASH - NOR
storage8Mb(1M x 8,512K x 16)
memory interfacein parallel
Write cycle time - words, pages55ns
interview time55 ns
Voltage - Power supply4.5V ~ 5.5V
Operating temperature-40°C ~ 125°C(TA)
Installation typesurface mount type
Package/casing48-TFSOP (0.724", 18.40mm wide)
Supplier device packaging48-TSOP
Basic product numberM29F800
Legacy Fab-13 NOR Flash
Utilization of Alliance Memory for New Orders
July 1, 2020
©2020 Micron Technology, Inc. All rights reserved. Information, products, and/or specifications are subject to change without notice.
All information is provided on an “AS IS” basis without warranties of any kind. Statements regarding products, including statements
regarding product features, availability, functionality, or compatibility, are provided for informational purposes only and do not modify
the warranty, if any, applicable to any product. Drawings may not be to scale. Micron, the Micron logo, and all other Micron trademarks
are the property of Micron Technology, Inc. All other trademarks are the property of their respective owners.

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