MGSF2N02EL
Preferred Device
Power MOSFET
2.8 Amps, 20 Volts, N−Channel SOT−23
These miniature surface mount MOSFETs low R
DS(on)
assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry.
Features
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•
•
•
•
Pb−Free Packages are Available
Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
Miniature SOT−23 Surface Mount Package Saves Board Space
I
DSS
Specified at Elevated Temperature
2.8 A, 20 V
R
DS(on)
= 85 mW (max)
N−Channel
D
Applications
•
DC−DC Converters
•
Power Management in Portable and Battery Powered Products, ie:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ T
A
= 25°C
− Single Pulse (t
p
= 10
ms)
Total Power Dissipation @ T
A
= 25°C
Operating and Storage Temperature
Range
Thermal Resistance
Junction−to−Ambient (Note 1)
Thermal Resistance
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
qJA
100
300
T
L
260
°C
Value
20
±
8.0
2.8
5.0
1.25
− 55 to
150
W
°C
°C/W
1
2
G
S
Unit
Vdc
Vdc
A
3
MARKING
DIAGRAM
SOT−23
CASE 318
STYLE 21
NT M
NT
M
= Device Code
= Date Code
PIN ASSIGNMENT
3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. 1” Pad, t < 10 sec.
2. Min pad, steady state.
1
Drain
2
Gate
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
©
Semiconductor Components Industries, LLC, 2004
1
August, 2004 − Rev. 2
Publication Order Number:
MGSF2N02EL/D
MGSF2N02EL
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 10
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
Gate−Source Leakage Current (V
GS
=
$
8.0 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 3)
Gate−Source Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance
(V
GS
= 4.5 Vdc, I
D
= 3.6 A)
(V
GS
= 2.5 Vdc, I
D
= 3.1 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
= 16 Vd I
D
= 1.75 Adc,
Vdc,
1 75 Ad
V
GS
= 4.0 Vdc) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Voltage
(I
S
= 1.0 Adc, V
GS
= 0 Vdc) (Note 3)
Reverse Recovery Time
(I
S
= 1.0 Adc, V
GS
= 0 Vdc,
dl
S
/ dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperature.
t
rr
t
a
t
b
Q
RR
V
SD
−
−
−
−
−
−
0.76
−
104
42
62
0.20
1.2
−
−
−
−
−
mC
ns
V
(V
DD
= 16 Vdc, I
D
= 2.8 Adc,
V
gs
= 4.5 V, R
G
= 2.3
W)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
gs
Q
gd
−
−
−
−
−
−
−
6.0
95
28
125
3.5
0.6
1.5
−
−
−
−
−
−
−
nC
ns
(V
DS
= 5.0 Vdc, V
GS
= 0 V
5 0 Vd
V,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
150
130
45
−
−
−
pF
V
GS(th)
0.5
−
R
DS(on)
−
−
78
105
85
115
−
−2.3
1.0
−
Vdc
mV/°C
mW
V
(BR)DSS
20
−
I
DSS
−
−
I
GSS
−
−
−
−
1.0
10
"100
nA
−
22
−
−
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
ORDERING INFORMATION
Device
MGSF2N02ELT1
MGSF2N02ELT1G
MGSF2N02ELT3
MGSF2N02ELT3G
Package
SOT−23
SOT−23
(Pb−Free)
SOT−23
SOT−23
(Pb−Free)
Shipping
†
3,000 Tape & Reel
3,000 Tape & Reel
10,000 Tape & Reel
10,000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MGSF2N02EL
8
I
D
, DRAIN CURRENT (AMPS)
5
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 10 V
V
GS
= 7 V
V
GS
= 5 V
T
J
= 25°C
V
GS
= 2.2 V
4
V
DS
w
10 V
6
V
GS
= 2.6 V
4
V
GS
= 3 V
2
V
GS
= 2.0 V
V
GS
= 1.8 V
V
GS
= 1.6 V
V
GS
= 1.2 V
3
2
T
J
= 100°C
1
T
J
= 55°C
0
0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0
0.5
1
1.5
2
2.5
3
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
0.3
Figure 2. Transfer Characteristics
0.12
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (W)
T
J
= 25°C
0.10
I
D
= 3.6 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (W)
0.2
0.08
0.06
0.1
V
GS
= 2.5 V
0.04
0.02
0
2
4
6
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
0
4
5
6
7
8
−I
D
, DRAIN CURRENTS (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source Voltage
Figure 4. On−Resistance vs. Gate Voltage
1.8
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
D
= 3.6 A
V
GS
= 4.5 V
10000
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 150°C
1000
1.5
1.2
0.9
100
T
J
= 100°C
0.6
−50
−25
0
25
50
75
100
125
150
10
4
8
12
16
20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with Temperature
Figure 6. Drain−to−Source Leakage
Current vs. Voltage
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3
MGSF2N02EL
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
350
300
C, CAPACITANCE (pF)
250
200
150
100
50
0
0
4
8
12
16
20
Ciss
Coss
Crss
T
J
= 25°C
5
QT
4
3
Q1
2
Q2
1
I
D
= 3.6 A
T
J
= 25°C
0
1
2
3
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE, (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total Charge
1.8
I
S
, SOURCE CURRENT (AMPS)
1000
V
DD
= 16 V
I
D
= 2.8 A
V
GS
= 4.5 V
t
f
t
r
t
d(off)
1.5
1.2
0.9
0.6
0.3
V
GS
= 4.5 V
T
J
= 25°C
t, TIME (ns)
100
10
t
d(on)
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation vs.
Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
MGSF2N02EL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AJ
A
L
3
1
2
B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
V
G
C
D
H
K
J
DIM
A
B
C
D
G
H
J
K
L
S
V
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
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