BSC0802LSATMA1 datasheet, PDF - EEWORLD Datasheet

BSC0802LSATMA1: Description表面贴装型 N 通道 100 V 20A（Ta），100A（Tc） 156W（Tc） PG-TDSON-8-7; CategoryDiscrete semiconductor The transistor; ManufacturerInfineon; Websitehttp://www.infineon.com/

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表面贴装型 N 通道 100 V 20A（Ta），100A（Tc） 156W（Tc） PG-TDSON-8-7

Parameter Name	Attribute value
category
Maker	Infineon
series	OptiMOS™ 5
Package	卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	20A（Ta），100A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	4.5V，10V
On-resistance (maximum value) at different Id and Vgs	3.4 milliohms @ 50A, 10V
Vgs(th) (maximum value) when different Id	2.3V @ 115µA
Gate charge (Qg) (maximum value) at different Vgs	46 nC @ 4.5 V
Vgs (maximum value)	±20V
Input capacitance (Ciss) (maximum value) at different Vds	6500 pF @ 50 V
FET function	-
Power dissipation (maximum)	156W（Tc）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount type
Supplier device packaging	PG-TDSON-8-7
Package/casing	8-PowerTDFN
Basic product number	BSC0802

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