DMDT9922
PNP DUAL, MATCHED PAIR SURFACE MOUNT TRANSISTOR
Features
ADVANCE INFORMATION
·
·
·
·
Epitaxial Planar Die Construction
Low Noise
High Current Gain
Matched Pair of Transistors
SOT-363
A
C
2
B
1
E
1
Dim
A
B
B C
C
1
Min
0.10
1.15
2.00
0.30
1.80
¾
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
Mechanical Data
·
·
·
·
·
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K3S
Weight: .006 grams (approx.)
E
2
KXX
B
2
C
D
F
H
J
M
0.65 Nominal
H
K
K
L
M
J
D
F
L
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Collector Voltage
Emitter-Emitter Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
V
CCO
V
EEO
I
C
P
d
R
qJA
T
j
, T
STG
DMDT9922
-50
-40
-5.0
-50
-50
-100
200
625
-55 to +125
Unit
V
V
V
V
V
mA
mW
K/W
°C
Characteristic
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
V
O
R R
P O
P F
N
A T
N O
IO
T
U N
U
IB
R
T
IS
D
DS30142 Rev. 1P-5
1 of 2
DMDT9922
D
E
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
ADVANCE INFORMATION
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Leakage Current
Emitter-Base Leakage Current
Collector-Emitter Leakage Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Impedance
Emitter-Base Offset Voltage
Change in Emitter-Base Offset Voltage vs. Collector-Base
Voltage (CMRR)
Change in Emitter-Base Offset Voltage vs.
Collector-Current
Average Offset Voltage Drift
Emitter-Base Offset Current
Change in Emitter-Base Offset Current vs. Collector-Base
Voltage
Average Offset Current Drift
Collector-Collector Leakage Current
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Output Conductance
Current Gain-Bandwidth Product
Notes:
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
h
FE
V
CE(SAT)
V
CE(SAT)
r
be
V
OS
DV
OS/
DV
CB
DV
OS/
DI
C
TC V
OS
I
OS
DI
OS/
DV
CB
TC I
OS
I
CC
C
obo
C
ibo
h
OE
f
T
Min
-50
-40
-5.0
¾
¾
¾
300
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Typ
¾
¾
¾
-0.3
¾
-4
450
-0.1
-0.1
-0.5
10
10
5
0.5
8
30
50
35
-4
Max
¾
¾
¾
-500
-500
-1000
555
-0.5
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
15
70
¾
¾
Unit
V
V
V
nA
nA
nA
¾
V
V
W
mV
mV
mV
mV/°C
nA
nA
pA/°C
pA
pF
pF
mS
MHz
Test Condition
I
C
= -50mA, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -50mA, I
C
= 0
V
CB
= -30V
V
EB
= -4.0V
V
CE
= -40V
I
C
= -1.0mA, V
CE
= -6.0V
I
C
= -50mA, I
B
= -5.0mA
I
C
= -1mA, I
B
= -0.1mA
I
C
= -10mA to -1mA
V
CB
= 0V, I
C
= -1mA to -1mA
V
CB
= 0V, I
C
= -1mA to -1mA
V
CB
= 0V, I
C
= -10mA to -1mA
I
C
= -10mA to -1mA
I
C
= -10mA, V
CB
= 0V
V
CB
= 0 to -50V
I
C
= -10mA
V
CE
= -40V
V
CB
= -10V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, I
C
= 0, f = 1MHz
I
C
= -1mA, V
CE
= -5V
V
CE
= -12V, I
C
= -2.0mA,
f = 100MHz
¾
¾
¾
10
170
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
£
300ms, duty cycle
£
2%.
V
O
R R
P O
P F
N
A T
N O
IO
T
U N
U
IB
R
T
IS
D
DS30142 Rev. 1P-5
2 of 2
DMDT9922
D
E
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