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2N3612

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size366KB,4 Pages
ManufacturerGPD Optoelectronics Corp
Download Datasheet Parametric View All

2N3612 Overview

Transistor

2N3612 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)7 A
ConfigurationSingle
Minimum DC current gain (hFE)35
JESD-609 codee0
Maximum operating temperature125 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)85 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)0.3 MHz
Base Number Matches1
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