DMN100
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
·
·
Extremely Low On-Resistance:
170mW @ V
GS
= 4.5V
High Drain Current: 1.1A
Ideal for Notebook Computer, Portable Phone,
PCMCIA Cards, and Battery Powered Circuits
SC-59
A
D
TOP VIEW
B
S
D
G
H
K
J
L
M
C
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.30
1.40
2.50
0.85
0.30
1.70
2.70
¾
1.00
0.55
0.10
Max
0.50
1.80
3.00
1.05
0.70
2.10
3.10
0.10
1.40
0.70
0.35
Mechanical Data
·
·
·
·
·
·
Case: SC-59, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagrams
Weight: 0.008 grams (approx.)
Ordering Information, See Sheet 2
G
E
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
@ T
A
= 25°C unless otherwise specified
Symbol
V
DSS
Continuous
Continuous
Pulsed
V
GSS
I
D
P
d
R
qJA
T
j
, T
STG
DMN100
30
±20
±
1.1
±
4.0
500
250
-55 to +150
Units
V
V
A
mW
K/W
°C
Characteristic
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1. Pulse width
£
300ms, duty cycle
£
2%.
DS30049 Rev. 5 - 2
1 of 3
DMN100
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
@ T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
@ T
j
= 25°C
@ T
j
= 125°C
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(ON)
t
D(OFF)
t
r
t
f
I
S
I
SM
V
SD
t
rr
Min
30
¾
¾
1.0
¾
1.3
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Typ
¾
¾
¾
¾
¾
2.4
150
90
30
5.5
0.8
1.3
10
25
15
45
¾
¾
¾
35
Max
¾
1.0
10
±
100
3.0
0.170
0.240
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
0.54
4.0
1.2
¾
Unit
V
µA
nA
V
W
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
¾
¾
I
F
= 1.0A, V
GS
= 0V
I
F
= 1.0A, di/dt = 50A/ms
V
DD
= 10V, I
D
= 0.5A,
V
GS
= 5.0V, R
GEN
= 50W
V
DS
= 24V, I
D
= 1.0A,
V
GS
= 10V
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Test Condition
V
GS
= 0V, I
D
= 250mA
V
DS
= 24V, V
GS
= 0V
V
GS
=
±
12V, V
DS
= 0V
V
DS
= 10V, I
D
=1.0mA
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 10V, I
D
= 1.0A
V
DS
= 10V, I
D
=0.5A
SOURCE- DRAIN RATINGS (BODY DIODE)
Continuous Source Current
Pulse Source Current
Forward Voltage
Reverse Recovery Time
Notes:
1. Pulse width
£
300ms, duty cycle
£
2%.
Ordering Information
Device
DMN100-7
Notes:
(Note 2)
Packaging
SC-59
Shipping
3000/Tape & Reel
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXX X
XXX = Product Type Marking Code
X = Assembly Lot No.
[0-9, A-Z, except G, I, J, O, Q, W]
DS30049 Rev. 5 - 2
2 of 3
DMN100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
5.0V
4.5V
4.0V
3.5V
1.0
I
D
, DRAIN CURRENT (A)
V
gs
= 4.5V
3.0V
0.1
V
gs
= 10V
2.5V
0
1
2
3
4
5
0.01
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
I
D
, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs Drain Current
4.0
0.30
0.25
0.20
V
GS
= 4.5V, R
DS
@ 0.5A
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
V
GS
= 10V
T
A
= 25
°
C
0.15
0.10
V
GS
= 10V, R
DS
@ 1.0A
0.05
0
-50
0
50
100
150
1
2
3
4
5
T
j
, JUNCTION TEMPERATURE (
°
C)
Fig. 3 On-Resistance vs Junction Temperature
V
GS
, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs Gate-Source Voltage
DS30049 Rev. 5 - 2
3 of 3
DMN100
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