®
DMV series
DAMPER + MODULATION DIODE FOR VIDEO
MAIN PRODUCT CHARACTERISTICS
MODUL
I
F(AV)
V
RRM
t
rr
V
F
(max)
3A&6A
600 V
50 ns
1.5 V
DAMPER
5A&6A
1500 V
135 ns
1.35 V
DAMPER
MODULATION
1
2
3
FEATURES AND BENEFITS
1
2
3
FULL KIT IN ONE PACKAGE
HIGH BREAKDOWN VOLTAGE CAPABILITY
VERY FAST RECOVERY DIODE
SPECIFIED TURN ON SWITCHING
CHARACTERISTICS
LOW STATIC AND PEAK FORWARD
VOLTAGE DROP FOR LOW DISSIPATION
INSULATED VERSION:
Insulated voltage = 2500 V
RMS
Capacitance = 7 pF
PLANAR TECHNOLOGY ALLOWING HIGH
QUALITY AND BEST ELECTRICAL
CHARACTERISTICS
OUTSTANDING PERFORMANCE OF WELL
PROVEN DTV AS DAMPER AND
TURBOSWITCH
TM
AS MODULATION
Insulated TO-220AB
(Bending option F5 available)
DESCRIPTION
High voltage semiconductor especially designed
for horizontal deflection stage in standard and high
resolution video display with E/W correction.
The insulated TO-220AB package includes both
the DAMPER diode and the MODULATION diode.
Assembled on automated line, it offers excellent
insulating and dissipating characteristics, thanks to
the internal ceramic insulation layer.
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol
V
RRM
I
FSM
Parameter
Repetitive peak reverse voltage
Surge non repetitive forward current
tp = 10 ms
sinusoidal
DMV16
DMV32
DMV56
T
stg
T
j
Storage temperature range
Maximum operating junction temperature
600
50
60
60
Value
MODUL DAMPER
1500
50
75
80
°C
V
A
Unit
- 40 to + 150
150
TURBOSWITCH is a trademark of STMicroelectronics
August 1999 - Ed: 2A
1/9
DMV series
THERMAL RESISTANCES
Symbol
R
th(j-c)
R
th(j-c)
R
th(c)
R
th(j-c)
Parameter
Damper junction to case
Modulation junction to case
Coupling
Total as per full I
F(AV)
maximum ratings
Value
DMV16 DMV32 DMV56
5.3
6.5
0.2
6.0
4.8
5.3
0.2
5.1
3.6
5.3
0.2
4.5
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES
Value
Symbol
Parameter
Test conditions
Tj = 25°C
Tj = 125°C
Unit
Typ. Max. Typ. Max.
V
F
*
Forward voltage drop
I
F
= 5 A
I
F
= 6 A
I
F
= 6 A
I
R
**
Reverse leakage current
V
R
= V
RRM
DMV16
DMV32
DMV56
DMV16
DMV32
DMV56
Pulse test :
* tp = 380
µs, δ
< 2%
** tp = 5 ms,
δ
< 2%
1.6
1.5
1.8
60
100
100
1.0
1.1
1.1
100
100
100
1.5
1.35
1.5
500
1000
1000
V
µA
To evaluate the maximum conduction losses of the DAMPER diode use the following equations :
DMV16: P = 1.14 x I
F(AV)
+ 0.072 x I
F2(RMS)
DMV32: P = 1.069 x I
F(AV)
+ 0.047 x I
F2(RMS)
DMV56: P = 1.15 x I
F(AV)
+ 0.059 x I
F2(RMS)
STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE
Value
Symbol
V
F
*
Parameter
Forward voltage drop
Test conditions
I
F
= 3A
I
F
= 5A
I
F
= 5A
I
R
**
Reverse leakage current
V
R
= 480V
DMV16
DMV32
DMV56
DMV16
DMV32
DMV56
Pulse test :
* tp = 380
µs, δ
< 2%
** tp = 5 ms,
δ
< 2%
Tj = 25°C
Typ.
Max.
1.4
1.75
1.75
20
100
100
Tj = 125°C
Typ.
1
1.2
1.2
150
600
600
Max.
1.3
1.5
1.5
500
2000
2000
Unit
V
µA
To evaluate the maximum conduction losses of the MODULATION diode use the following equations :
DMV16: P = 1.06 x I
F(AV)
+ 0.08x I
F2(RMS)
DMV32: P = 1.15 x I
F(AV)
+ 0.07 x I
F2(RMS)
DMV56: P = 1.15 x I
F(AV)
+ 0.07 x I
F2(RMS)
2/9
®
DMV series
RECOVERY CHARACTERISTICS OF THE DAMPER DIODE
Symbol
t
rr
Parameter
Reverse recovery time
I
F
= 100mA
I
R
= 100mA
I
RR
= 10mA
I
F
= 1A
dI
F
/dt = -50A/µs
V
R
= 30V
Test conditions
Tj = 25°C
DMV16
DMV32
Tj = 25°C
DMV56
DMV16
DMV32
DMV56
Value
Typ.
1500
850
750
200
130
110
300
175
135
ns
Max.
Unit
ns
t
rr
Reverse recovery time
RECOVERY CHARACTERISTICS OF THE MODULATION DIODE
Symbol
t
rr
Parameter
Reverse recovery time
I
F
= 100mA
I
R
= 100mA
I
RR
= 10mA
I
F
= 1A
dI
F
/dt = -50A/µs
V
R
= 30V
Test conditions
Tj = 25°C
DMV16
DMV32
DMV56
Tj = 25°C
DMV16
DMV32
DMV56
Value
Typ.
210
110
110
Max.
650
350
350
95
50
50
ns
Unit
ns
t
rr
Reverse recovery time
TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE
Symbol
t
fr
Parameter
Forward recovery time
Test conditions
I
F
= 6A
dI
F
/dt = 80A/µs
V
FR
= 3V
I
F
= 6A
dI
F
/dt = 80A/µs
Tj = 100°C
DMV16
DMV32
DMV56
Tj = 100°C
DMV16
DMV32
DMV56
TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE
Symbol
t
fr
Parameter
Forward recovery time
Test conditions
I
F
= 3A
dI
F
/dt = 80A/µs
V
FR
= 3V
I
F
= 5A
dI
F
/dt = 80A/µs
V
FR
= 3V
V
FP
Peak forward voltage
I
F
= 3A
dI
F
/dt = 80A/µs
I
F
= 5A
dI
F
/dt = 80A/µs
Tj = 100°C
Tj = 100°C
DMV16
Value
Typ.
Max.
500
Unit
ns
Value
Typ.
350
570
350
25
21
19
34
28
26
V
Max.
Unit
ns
V
FP
Peak forward voltage
DMV32
DMV56
DMV16
DMV32
DMV56
300
300
8
10
10
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V
®
DMV series
ORDERING INFORMATION
DMVxx / F5
LEAD BENDING (OPTION)
DAMPER AND MODULATION DIODES FOR VIDEO
Fig. 1-1:
Power dissipation versus peak forward
current (triangular waveform,
δ=0.45)
(damper
diode.)
PF(av)(W)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
DMV16
DMV56
DMV32
Fig. 1-2:
Power dissipation versus peak forward
current (triangular waveform,
δ=0.45)
(modulation
diode)
PF(av)(W)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
DMV32/DMV56
DMV16
Ip(A)
0
1
2
3
4
5
6
Ip(A)
0
1
2
3
4
5
6
Fig. 2-1:
Average forward current versus ambient
temperature (damper diode).
IF(av)(A)
7
6
5
4
DMV32
DMV16
Fig. 2-2:
Average forward current versus ambient
temperature (modulation diode).
IF(av)(A)
6
5
DMV32/DMV56
DMV56
4
3
DMV16
3
2
1
0
0
δ
=tp/T
T
Rth(j-a)=Rth(j-c)
2
T
Rth(j-a)=Rth(j-c)
1
tp
Tamb(°C)
50
75
100
125
150
25
0
δ
=tp/T
tp
Tamb(°C)
50
75
100
125
150
0
25
4/9
®
DMV series
Fig. 3-1:
Forward voltage drop versus forward
current (damper diode) DMV16.
IFM(A)
20.0
10.0
Typical
Tj=125°C
Fig. 3-2:
Forward voltage drop versus forward
current (damper diode)DMV32.
IFM(A)
50.0
Typical
Tj=125°C
10.0
Maximum
Tj=125°C
Maximum
Tj=125°C
Maximum
Tj=25°C
1.0
Maximum
Tj=25°C
1.0
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
Fig. 3-3:
Forward voltage drop versus forward
current (damper diode)DMV56.
IFM(A)
50.0
Typical
Tj=125°C
Fig. 3-4:
Forward voltage drop versus forward
current (modulation diode)DMV16.
IFM(A)
20.0
10.0
10.0
Maximum
Tj=125°C
Maximum
Tj=25°C
Typical
Tj=125°C
Maximum
Tj=125°C
1.0
1.0
Maximum
Tj=25°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Fig. 3-5:
Forward voltage drop versus forward
current (modulation diode)DMV32 and DMV56.
IFM(A)
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration.
K=[Zth(j-c)/Rth(j-c)]
1.0
δ
= 0.5
20.0
10.0
Typical
Tj=125°C
0.5
Maximum
Tj=125°C
δ
= 0.2
δ
= 0.1
1.0
Maximum
Tj=25°C
0.2
Single pulse
T
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
tp(s)
0.1
1E-3
1E-2
1E-1
δ
=tp/T
tp
1E+0
®
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