GP1600FSS12-ABC
GP1600FSS12-ABC
Powerline N-Channel IGBT Module
Advance Information
DS5173-1.2 May 1999
The GP1200FSS12-ABC is a single switch 1200V,
robust n channel enhancement mode insulated gate
bipolar transistor (IGBT) module. Designed for low power
loss, the module is suitable for a variety of high voltage
applications in motor drives and power conversion. The
high impedance gate simplifies gate drive considerations
enabling operation directly from low power control
circuitry.
Fast switching times allow high frequency operation
making the device suitable for the latest drive designs
employing pwm and high frequency switching. The IGBT
has a wide reverse bias safe operating area (RBSOA) for
ultimate reliability in demanding applications.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise earthed
heat sinks for safety.
The powerline range of high power modules includes
dual and single switch configurations with a range of
current and voltage capabilities to match customer system
demands.
Typical applications include dc motor drives, ac pwm
drives, main traction drives and auxiliaries, large ups
systems and resonant inverters.
V
CES
V
CE(sat)
I
C
I
C(PK)
Key Parameters
1200V
(typ)
2.7V
(max)
1600A
(max)
3200A
5
6
3
7
9
12
4
11
10
2
8
1
Outline type code: F
Features
s
s
s
s
s
s
s
(See package details for further information)
Fig. 1 Electrical connections - (not to scale)
3/4(E)
n - Channel.
Enhancement Mode.
High Input Impedance.
Optimised For High Power High Frequency Operation.
Isolated Base.
Full 1200V Capability
8(E
1
)
9(G
1
)
1/2(C)
7(C
1
)
1600A Per Module
Fig.2 Single switch circuit diagram
Applications
s
s
s
s
Ordering Information
Order As:
GP1600FSS12-ABC
Note: When ordering, please use the whole part number.
High Power Switching.
Motor Control.
Inverters
Traction Systems.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/11
GP1600FSS12-ABC
Absolute Maximum Ratings - Per Arm
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
T
case
= 25˚C unless stated otherwise.
Symbol
V
CES
V
GES
I
C
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC, T
case
= 25˚C
DC, T
case
= 75˚C
I
C(PK)
P
max
V
isol
Maximum power dissipation
Isolation voltage
1ms, T
case
= 75˚C
T
case
= 25˚C (Transistor)
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
V
GE
= 0V
-
Test Conditions
Max.
1200
±20
2100
1600
3200
11400
2500
Units
V
V
A
A
A
W
V
Thermal And Mechanical Ratings
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - Case to heatsink
(per module)
Junction temperature
Conditions
DC junction to case
DC junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
T
stg
-
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M4
Electrical connections - M8
-
-
Min.
-
-
-
-
-
–40
-
-
-
Max. Units
11
20
8
150
125
125
5
2
10
o
C/kW
C/kW
o
o
C/kW
o
C
C
o
o
C
Nm
Nm
Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2/11
GP1600FSS12-ABC
Electrical Characteristics
T
case
= 25˚C unless stated otherwise.
Symbol
I
CES
Parameter
Collector cut-off current
Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125˚C
I
GES
V
GE(TH)
V
CE(SAT)
I
F
I
FM
V
F
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
V
GE
=
±20V,
V
CE
= 0V
I
C
=
40mA,
V
GE
= V
CE
V
GE
= 15V, I
C
=1600A
V
GE
= 15V, I
C
= 1600A, T
case
= 125˚C
Diode forward current
Diode maximum forward current
Diode forward voltage
DC
t
p
= 1ms
I
F
=1600A
I
F
=1600A, T
case
= 125˚C
C
ies
L
M
Input capacitance
Module inductance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
Min.
-
-
-
4
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
2.7
3.2
-
-
1.8
1.8
180
15
Max.
2
75
8
7.5
3.5
4.0
1600
3200
2.3
2.4
-
-
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/11
GP1600FSS12-ABC
Inductive Switching Characteristics
For definition of switching waveforms, refer to figure 3 and 4.
T
case
= 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
Q
rr
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery charge
Conditions
Min.
-
Typ.
1650
200
350
1600
450
160
100
170
Max.
1800
250
450
1750
550
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
I
C
= 1600A
V
GE
=
±15V
V
CE
= 600
R
G(ON)
= R
G(OFF)
= 3.3Ω
L ~ 100nH
-
-
-
-
-
200
130
-
I
F
= 1600A
V
R
= 50%V
CES
,
dI
F
/dt = 2000A/µs
-
-
T
case
= 125˚C unless stated otherwise.
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
Q
rr
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery charge
-
I
C
= 1600A
V
GE
=
±15V
V
CE
= 600
R
G(ON)
= R
G(OFF)
= 3.3Ω
L ~ 100nH
-
-
-
-
-
I
F
= 1600A
V
R
= 50%V
CES
,
dI
F
/dt = 2000A/µs
-
-
1900
250
400
1750
500
250
250
225
2100
300
500
2000
550
350
350
-
ns
ns
mJ
ns
ns
mJ
µC
µC
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
4/11
GP1600FSS12-ABC
Switching Definitions
+15V
10%
0V
-15V
t
4
+ 5µs
V
ge
E
on
=
∫
V
ce c
.I dt
I
C
90%
t
1
t
d(on)
= t
2
- t
1
t
r
= t
3
- t
2
10%
V
ce
t
1
t
2
t
3
t
4
Fig.3 Definition of turn-on switching times
+15V
90%
0V
-15V
t
7
+ 5µs
V
ge
E
off
=
∫
V
t
5
ce c
.I dt
90%
t
d(off)
= t
6
- t
5
10%
I
C
t
f
= t
7
- t
6
V
ce
t
5
t
6
t
7
Fig.4 Definition of turn-off switching times
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/11
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