* Same as SOT-89. Products shipped on 2000 piece carrier tape reels.
** Die in wafer form.
Features
❏
High input impedance
❏
Low input capacitance
❏
Fast switching speeds
❏
Low on resistance
❏
Free from secondary breakdown
❏
Low input and output leakage
Advanced DMOS Technology
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
istic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
❏
Normally-on switches
❏
Solid state relays
❏
Converters
❏
Linear amplifiers
❏
Constant current sources
❏
Power supply circuits
❏
Telecom
Package Options
D
G
D
S
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
BV
DSX
BV
DGX
±
20V
-55°C to +150°C
TO-243AA
(SOT-89)
Note: See Package Outline section for dimensions.
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
1
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DN3525
Thermal Characteristics
Package
TO-243AA
†
I
D
(continuous)*
360mA
I
D
(pulsed)
600mA
Power Dissipation
@ T
A
= 25
°
C
1.6W
†
θ
jc
°
C/W
15
θ
ja
°
C/W
78
†
I
DR
*
360mA
I
DRM
600mA
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSX
V
GS(OFF)
∆V
GS(OFF)
I
GSS
I
D(OFF)
Parameter
Drain-to-Souce Breakdown Voltage
Gate-to-Source OFF Voltage
Change in V
GS(OFF)
with Temperature
Gate Body Leakage Current
Drain-to-Source Leakage Current
Min
250
-1.5
-3.5
4.5
100
1.0
1.0
I
DSS
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Saturated Drain-to-Source Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
800
225
270
20
5.0
350
60
20
20
25
25
40
1.8
V
ns
ns
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25Ω,
V
GS
= 0V to -10V
V
GS
= -5.0V, I
SD
= 150mA
V
GS
= -5.0V, I
SD
= 150mA
pF
V
GS
= -5.0V, V
DS
= 25V, f =1.0Mhz
300
6.0
1.1
Typ
Max
Unit
V
V
mV/°C
nA
µA
mA
mA
Ω
%/°C
mg
Conditions
V
GS
= -5.0V, I
D
= 100µA
V
DS
= 15V, I
D
= 1.0mA
V
DS
= 15V, I
D
= 1.0mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= -5.0V, V
DS
= Max Rating
V
GS
= -5.0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 0V, V
DS
= 15V
V
GS
= 0V, I
D
= 200mA
V
GS
= 0V, I
D
= 200mA
I
D
= 150mA, V
DS
=10V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
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