Semiconductor
DN500
NPN Silicon Transistor
Description
•
Extremely low collector-to-emitter saturation voltage
( V
C E ( S A T )
=0.2V Typ. @I
C
/I
B
=3A/150mA)
•
Suitable for low voltage large current drivers
•
Complementary pair with DP500
•
Switching Application
Ordering Information
Type NO.
DN500
Marking
DN500
Package Code
TO-92
Outline Dimensions
unit :
mm
PIN Connections
1. Emitter
2. Collector
3. Base
KST-9086-002
1
DN500
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25° C)
Symbol
V
C B O
V
C E O
V
E B O
I
C
P
C
T
j
T
stg
Ratings
15
12
5
5
625
150
-55~150
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter on voltage
Base-Emitter on voltage
Transition frequency
Collector output capacitance
(Ta=25° C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat1)
V
BE(sat)
f
T
C
ob
Test Condition
I
C
=50µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50µA, I
C
=0
V
CB
=15V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=3A
I
C
=3A, I
B
=150mA
I
C
=3A, I
B
=150mA
V
CB
=5V, I
C
=500mA
V
CB
=10V, I
E
=0, f=1MHz
Min.
15
12
5
-
-
160
40
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
150
-
Max.
-
-
-
0.1
0.1
320
-
0.3
1.2
-
50
Unit
V
V
V
µA
µA
-
-
V
V
MHz
pF
KST-9086-002
2
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