ADVANCE INFORMATION
Am29LV641M
64 Megabit (4 M x 16-Bit) MirrorBit™ 3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O™ Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
s
Single power supply operation
— 2.7–3.6 V for read, erase, and program operations
s
VersatileI/O™ control
— Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the V
IO
pin; operates from 1.65 to 3.6 V
s
Manufactured on 0.23 µm MirrorBit process
technology
s
SecSi™ (Secured Silicon) Sector region
— 128-word sector for permanent, secure identification
through an 8-word random Electronic Serial Number,
accessible through a command sequence
— May be programmed and locked at the factory or by
the customer
s
Flexible sector architecture
— One hundred twenty-eight 32 Kword sectors
s
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
s
Minimum 100,000 erase cycle guarantee per sector
s
20-year data retention at 125°C
PERFORMANCE CHARACTERISTICS
s
High performance
— 90 ns access time
— 25 ns page read times
— 1 s typical sector erase time
— 5.9 µs typical write buffer word programming time:
16-word write buffer reduces overall programming
time for multiple-word updates
— 4-word page read buffer
— 16-word write buffer
s
Low power consumption (typical values at 3.0 V, 5
MHz)
— 30 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
s
Package options
— 48-pin TSOP
SOFTWARE & HARDWARE FEATURES
s
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
s
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
changing code in locked sectors
— ACC (high voltage) input accelerates programming
time for higher throughput during system production
— Write Protect input (WP#) protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
25261
Rev:
A
Amendment/0
Issue Date:
August 3, 2001
Refer to AMD’s Website (www.amd.com) for the latest information.
A D V A N C E
I N F O R M A T I O N
GENERAL DESCRIPTION
The Am29LV641M is a 64 Mbit, 3.0 volt single power
supply flash memory devices organized as 4,194,304
words. The devices have a 16-bit wide data bus, and
can be programmed either in the host system or in
standard EPROM programmers.
An access time of 90 ns is available for applications
where V
IO
≥
3.0 V. An access time of 100 ns is avail-
able for applications where V
IO
< 3.0 V. The device is
offered in a 48-pin TSOP or 63-ball FBGA package.
Each device has separate chip enable (CE#), write en-
able (WE#) and output enable (OE#) controls.
Each device requires only a
single 3.0 volt power
supply
(2.7 V to 3.6 V) for both read and write func-
tions. In addition to a V
CC
input, a high-voltage
accel-
erated program (ACC )
input provides shor ter
programming times through increased current. This
feature is intended to facilitate factory throughput dur-
ing system production, but may also be used in the
field if desired.
The device is entirely command set compatible with
the
JEDEC single-power-supply Flash standard.
Commands are written to the device using standard
microprocessor write timing. Write cycles also inter-
nally latch addresses and data needed for the pro-
gramming and erase operations.
The
sector erase architecture
allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through
command sequences. Once a program or erase oper-
ation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle)
status bits
to de-
termine whether the operation is complete. To facilitate
programming, an
Unlock Bypass
mode reduces com-
mand sequence overhead by requiring only two write
cycles to program data instead of four.
The
VersatileI/O™
(V
IO
) control allows the host sys-
tem to set the voltage levels that the device generates
at its data outputs and the voltages tolerated at its data
inputs to the same voltage level that is asserted on the
V
IO
pin. This allows the device to operate in 1.8 V or 3
V system environment as required.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of sectors of memory.
This can be achieved in-system or via programming
equipment.
The
Erase Suspend/Erase Resume
feature allows
the host system to pause an erase operation in a given
sector to read or program any other sector and then
complete the erase operation. The
Program Sus-
pend/Program Resume
feature enables the host sys-
tem to pause a program operation in a given sector to
read any other sector and then complete the program
operation.
The
hardware RESET# pin
terminates any operation
in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
The device reduces power consumption in the
standby mode
when it detects specific voltage levels
on CE# and RESET#, or when addresses have been
stable for a specified period of time.
The
SecSi™ (Secured Silicon) Sector
provides a
128-word area for code or data that can be perma-
nently protected. Once this sector is protected, no fur-
ther changes within the sector can occur.
The
Write Protect (WP#)
feature protects the first or
last sector by asserting a logic low on the WP# pin.
The protected sector will still be protected even during
accelerated programming.
AMD MirrorBit flash technology combines years of
Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effec-
tiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The
data is programmed using hot electron injection.
2
Am29LV641M
Microcontroller MCU
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