Semiconductor
DP500
PNP Silicon Transistor
Description
•
Extremely low collector-to-emitter saturation voltage
( V
CE(SAT)
=-0.2V Typ. @I
C
/I
B
=-3A/-150mA)
•
Suitable for low voltage large current drivers
•
Excellent h
FE
Linearity
•
Complementary pair with DN500
Ordering Information
Type NO.
DP500
Marking
DP500
Package Code
T-92
Outline Dimensions
unit :
mm
PIN Connections
1. Emitter
2. Collector
3. Base
KST-9091-000
1
DP500
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25° C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
-15
-12
-5
-5
625
150
-55~150
Unit
V
V
V
A
mW
°C
°C
* : When mounted on 40×40×0.8mm ceramic substate
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter on voltage
Base-Emitter on voltage
Transition frequency
Collector output capacitance
(Ta=25° C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
*
h
FE2
V
CE(sat1)
V
BE(sat)
f
T
C
ob
Test Condition
I
C
=-50µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-12V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-3A
I
C
=-3A, I
B
=-150mA
I
C
=-3A, I
B
=-150mA
V
CB
=-5V, I
C
=-500mA
V
CB
=-10V, I
E
=0, f=1MHz
Min.
-15
-12
-5
-
-
120
40
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
150
-
Max.
-
-
-
-1
-1
700
-
-0.3
-1.2
-
50
Unit
V
V
V
µA
µA
-
-
V
V
MHz
pF
* : h
FE
rank / O : 120 ~ 240, Y : 200 ~ 400, G : 350 ~ 700
KST-9091-000
2
Embedded System
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