DATASHEET
Photon Detection
C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types
N-type Silicon PIN Photodetectors
Key Features
High responsivity
Fast response time
Low operating voltage
Low capacitance
Hermetically sealed packages
RoHS Compliant
Applications
Laser detection systems
Photometry
Data transmission
Instrumentation
High speed switching
Overview
The family of N-type silicon PIN photodiodes is designed for use in a
wide variety of broad band low light level applications covering the
spectral range from below 400 to over 1100 nanometers.
The wide range of photosensitive areas making up this series
provides a broad choice in photosensitive areas and in time
response characteristics. All the photodiodes are hermetically
sealed in TO packages, and is anti-reflection coated to enhance
responsivity at 900nm.
These characteristics make the devices highly useful in HeNe and
GaAs laser detection systems and in optical demodulation, data
transmission, ranging, and high-speed switching applications.
Recognizing that different applications have different performance
requirements, Excelitas offers a wide range of customizations of
these photodiodes to meet your design challenges. Responsivity
and noise screening, custom device testing and packaging are
among many of the application specific solutions available.
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Page 1 of 9
C30807, 808, 822, 809, and 810EH –Rev.2018.07.09
C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types
N-type Silicon PIN Photodetectors
Table 1 ̶ Mechanical and Optical Characteristics
Parameter
Shape
Package
Photosensitive Surface:
Useful area
Useful diameter
Field of View:
Nominal field of view α
(see Figure 5)
Nominal field of view α’
(see Figure 5)
A
d
FoV
Symbol C30807EH C30808EH C30822EH C30809EH C30810EH
Circular
TO-18
0.8
1
60
88
Circular
TO-5
5
2.5
85
129
Circular
TO-8
20
5
94
142
Circular
TO-8
50
8
56
147
Circular
TO-36
100
11
77
138
mm
2
mm
Degrees
Unit
Table 2 ̶ Electro-Optical Characteristics
Case Temperature T
a
= 22 °C; at the DC reverse operating voltage V=45V, V
op
Parameter
Breakdown Voltage
Operating Voltage
Responsivity
at 900 nm
at 1060 nm
Quantum Efficiency
at 900 nm
at 1060 nm
Total Dark Current
at Vop = 10V
at V
op
= 45V
Noise Current
f=10kHz, Δf=1.0Hz
Symbol
V
br
V
op
R
Q.E.
I
d
i
n
C
d
NEP
0.5
0.1
70
12
100
C30807EH
Min
Typ
Max
C30808EH
Min
100
Typ
Max
C30822EH
Min
100
Typ
Max
Unit
V
45
V
A/W
%
50
250
0.9
20
1.5
4.5
nA
pA/√Hz
pF
pW/√Hz
45
0.6
0.15
83
17
2
10
0.06
2.5
0.1
0.4
1
50
0.42
3
0.7
2.8
0.5
0.1
70
12
45
0.6
0.20
83
23
5
30
0.1
5
0.17
0.50
25
150
0.7
10
1.2
3.5
0.5
0.1
70
12
0.6
0.20
83
23
10
50
0.13
12
0.22
0.65
Capacitance
Noise Equivalent Power
at 900 nm
at 1060 nm
f – 100kHz, ∆f – 1.0Hz
Rise/Fall Time, R
L
= 50Ω,
900nm:
10% to 90% points
90% to 10% points
t
r
t
f
3
6
5
10
12
13
20
20
12
13
20
20
ns
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Page 2 of 9
C30807, 808, 822, 809, and 810EH –Rev.2018.07.09
C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types
N-type Silicon PIN Photodetectors
Table 2 (continued) ̶ Electro-Optical Characteristics
Case Temperature T
a
= 22 °C; at the DC reverse operating voltage V=45V, V
op
Parameter
Breakdown Voltage
Operating Voltage
Responsivity
at 900 nm
at 1060 nm
Quantum Efficiency
at 900 nm
at 1060 nm
Total Dark Current
at Vop = 10V
at V
op
= 45V
Noise Current
f=10kHz, Δf=1.0Hz
Symbol
Min
V
br
V
op
R
Q.E.
0.5
0.1
70
12
100
C30809EH
Typ
Max
Min
100
45
0.6
0.20
83
23
25
70
0.15
25
0.2
0.75
12
13
130
350
1.1
45
1.6
5.5
20
20
0.5
0.1
70
12
C30810EH
Typ
Max
Unit
V
45
0.6
0.20
83
23
83
300
0.3
45
0.45
1.5
15
20
400
1500
2.1
90
3.6
11
25
30
V
A/W
%
I
d
i
n
C
d
NEP
nA
pA/√Hz
pF
pW/√Hz
Capacitance
Noise Equivalent Power
at 900 nm
at 1060 nm
f – 100kHz, ∆f – 1.0Hz
Rise/Fall Time, R
L
= 50Ω:
10% to 90% points
90% to 10% points
t
r
t
f
ns
Table 3 ̶ Absolute – Maximum Ratings, Limiting Values
Parameter
Reverse Bias Voltage
Photocurrent Density :
average value
peak value
Forward Current:
average value
peak value
Storage Temperature
Operating Temperature
Soldering
Symbol Minimum Maximum
100
J
p
5
20
10
20
100
80
200
Unit
V
mA/mm
2
Continuous operation, at T
a
= 22 °C
Remarks/Conditions
I
F
T
stg
T
o
-60
-40
mA
°C
°C
°C
Continuous operation, at T
a
= 22 °C
(For 1 second duration, non-repetitive)
5 seconds, leads only
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Page 3 of 9
C30807, 808, 822, 809, and 810EH –Rev.2018.07.09
C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types
N-type Silicon PIN Photodetectors
Figure 1 ̶ Typical Spectral Responsivity Characteristics
0.70
0.60
0.50
Responsivity [A/W]
0.40
0.30
0.20
C30807EH
0.10
0.00
400
500
600
700
800
Wavelength [nm]
900
1000
1100
1200
C30808-809-810-822-EH
Figure 2 ̶ Typical Noise Current as a function of Frequency, T
a
=22°C, V
op
= 45V
10
Noise Current, i
n
[pA/√Hz]
1
C30810
C30809
C30822
C30808
C30807
0.1
0.01
10
100
1000
10000
Frequency [Hz]
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Page 4 of 9
C30807, 808, 822, 809, and 810EH –Rev.2018.07.09
C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types
N-type Silicon PIN Photodetectors
Figure 3 ̶ Typical Dark Current as a function of Ambient Temperature, V
op
= 45V
1.E+05
1.E+04
Dark Current, I
d
[nA]
C30810
C30809
C30822
C30808
C30807
1.E+03
1.E+02
1.E+01
1.E+00
10
Ambient Temperature [°C]
100
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Page 5 of 9
C30807, 808, 822, 809, and 810EH –Rev.2018.07.09
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