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IXTM15N50A

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size48KB,1 Pages
ManufacturerIXYS
Download Datasheet Parametric Compare View All

IXTM15N50A Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

IXTM15N50A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIXYS
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)15 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)200 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

IXTM15N50A Related Products

IXTM15N50A IXTH12N45A IXTM12N50A IRF453
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Reach Compliance Code unknown unknow unknow unknown
Configuration Single Single SINGLE WITH BUILT-IN DIODE Single
Maximum drain current (Abs) (ID) 15 A 12 A 12 A 11 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 200 W 150 W 150 W 125 W
surface mount NO NO NO NO
Is it Rohs certified? incompatible incompatible - incompatible
JESD-609 code e0 e0 - e0
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Base Number Matches 1 1 1 -

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