Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | IXYS |
| package instruction | , |
| Reach Compliance Code | unknown |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 15 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 200 W |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 |
| IXTM15N50A | IXTH12N45A | IXTM12N50A | IRF453 | |
|---|---|---|---|---|
| Description | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| Reach Compliance Code | unknown | unknow | unknow | unknown |
| Configuration | Single | Single | SINGLE WITH BUILT-IN DIODE | Single |
| Maximum drain current (Abs) (ID) | 15 A | 12 A | 12 A | 11 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 200 W | 150 W | 150 W | 125 W |
| surface mount | NO | NO | NO | NO |
| Is it Rohs certified? | incompatible | incompatible | - | incompatible |
| JESD-609 code | e0 | e0 | - | e0 |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 | 1 | 1 | - |