MOSFET
2N7002KDW-HF
N-Channel
RoHS Device
Halogen Free
Features
- High density cell design for low R
DS(ON)
.
- Voltage controlled small signal switch.
- High saturation current capability.
6
0.087(2.20)
0.079(2.00)
5
4
SOT-363
- ESD protected.
0.053(1.35)
0.045(1.15)
1
2
0.055(1.40)
0.047(1.20)
3
Mechanical data
- Case: SOT-363, molded plastic.
- Epoxy: UL 94V-0 flammability rating.
0.039(1.00)
0.035(0.90)
0.006(0.15)
0.004(0.10)
0.094(2.40)
0.085(2.15)
Circuit Diagram
6
D1
5
G2
4
S2
0.014(0.35)
0.006(0.15)
0.004(0.10)
0.000(0.00)
0.018(0.46)
0.010(0.26)
Dimensions in inches and (millimeter)
S1
1
G1
2
D2
3
Maximum Ratings
(at T =25°C unless otherwise noted)
A
Parameter
Drain-Source voltage
Gate-Source voltage
Drain current
Total power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storge temperature range
Symbol
V
DS
V
GS
I
D
P
D
R
θJA
T
J
T
STG
Value
60
±20
340
150
820
150
-55 to +150
Unit
V
V
mA
mW
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
SP-JTR49
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Page 1
Comchip Technology CO., LTD.
MOSFET
Electrical Characteristics
(at T =25°C unless otherwise noted)
A
Parameter
Static Characteristics
Drain-Source breakdown voltage
Gate-Threshold voltage (Note 1)
Gate-body leakage
Zero gate voltage drain current
Drain-Source on-resistance (Note 1)
Conditions
Symbol
Min
Typ
Max
Unit
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 1mA
V
DS
= 0V, V
GS
= ±20V
V
DS
= 48V, V
GS
= 0V
V
GS
= 4.5V, I
D
= 200mA
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
60
1
V
2.5
±10
1
5.3
V
V
µ
A
µA
Ω
5
1.5
30
V
nC
V
GS
= 10V, I
D
= 500mA
Diode forward voltage (Note 1)
Recovered charge
Dynamic Characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching Characteristics
Turn-on delay time
Turn-off delay time
Reverse recovery time
Gate-Source Zener Diode
Gate-Source breakdown voltage
I
gs
= ±1mA (open drain)
BV
GSO
±21.5
V
DD
= 50V, V
GS
= 10V, R
L
= 250Ω
R
GS
= 50Ω, R
GEN
= 50Ω
V
GS
= 0V, I
S
= 300mA, V
R
= 25V
dls/d
t
= -100A/µs
t
d(on)
t
d(off)
trr
30
V
DS
= 10V, V
GS
= 0V, f = 1MHz
C
iss
C
oss
C
rss
V
GS
= 0V, I
S
= 300mA
V
GS
= 0V, I
S
= 300mA, V
R
= 25V
dls/dt = -100A/µs
V
SD
Qr
40
30
10
pF
pF
pF
10
15
ns
ns
ns
±30
V
Notes: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
Company reserves the right to improve product design , functions and reliability without notice.
SP-JTR49
REV:A
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Comchip Technology CO., LTD.
MOSFET
Rating and Characteristic Curves (2N7002KDW-HF)
Fig.1 - Output Characteristics
1.2
Ta=25°C
Pulsed
V
GS
=
5V, 6V, 7V, 10V
Fig.2 - Transfer Characteristics
1.2
V
DS
=3V
Pulsed
Drain Current, I
D
(A)
Drain Current, I
D
(A)
0.8
V
GS
=4V
0.8
T
A
=100°C
V
GS
=3V
0.4
0.4
T
A
=25°C
0
0
1
2
3
4
5
0
0
2
4
6
8
Drain to Source Voltage, V
DS
(V)
Gate to Source Voltage, V
GS
(V)
Fig.3 - R
DS(ON)
― I
D
5
Ta=25°C
Pulsed
Fig.4 - R
DS(ON)
― V
GS
10
T
A
=25°C
Pulsed
On-Resistance, R
DS(ON)
(Ω)
4
On-Resistance, R
DS(ON)
(Ω)
8
I
D
=500mA
3
6
2
V
GS
=4.5V
4
1
V
GS
=10V
2
0
0
300
600
900
1200
1500
0
0
2
4
6
8
10
Drain Current, I
D
(mA)
Gate to Source Voltage, V
GS
(V)
Fig.5 - I
S
— V
SD
2
1
Pulsed
Fig.6 - Threshold Voltage
1.8
1.6
Threshold Voltage, V
TH
(V)
Source Current, Is (A)
1.4
I
D
=250µA
0.1
T
A
=100°C
1.2
1.0
0.8
0.6
T
A
=25°C
0.01
1E-3
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.4
25
50
75
100
125
Source to Drain Voltage, V
SD
(V)
Junction Temperature, T
J
(°C)
Company reserves the right to improve product design , functions and reliability without notice.
SP-JTR49
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Comchip Technology CO., LTD.
MOSFET
Reel Taping Specification
d
P
0
P
1
E
F
6
5
4
W
B
1
2
3
C
P
A
12
0
o
D
2
D
1
D
W
1
SYMBOL
SOT-363
(mm)
(inch)
SYMBOL
SOT-363
(mm)
(inch)
A
2.40
±
0.10
B
2.55
±
0.10
C
1.20
±
0.10
d
1.50
±
0.10
D
178.00
±
1.00
D
1
54.40
±
0.50
D
2
13.00
±
0.20
0.094
±
0.004 0.100
±
0.004 0.047
±
0.004 0.059
±
0.004 7.008
±
0.039 2.142
±
0.020 0.512
±
0.008
E
1.75
±
0.10
F
3.50
±
0.05
P
4.00
±
0.10
P
0
4.00
±
0.10
P
1
2.00
±
0.05
W
W
1
8.00
+
0.30
13.10
±
1.30
-
0.10
0.315
+
0.012
0.069
±
0.004 0.138
±
0.002 0.157
±
0.004 0.157
±
0.004 0.079
±
0.002
0.516
±
0.051
-
0.004
Company reserves the right to improve product design , functions and reliability without notice.
SP-JTR49
REV:A
Page 4
Comchip Technology CO., LTD.
MOSFET
Marking Code
Part Number
2N7002KDW-HF
Marking Code
72K
1
6
5
4
72K
2
3
Suggested PAD Layout
C
SOT-363
SIZE
(mm)
A
B
C
D
0.40
0.816
0.65
1.94
(inch)
0.016
D
0.032
0.026
0.076
A
B
Note: 1.The pad layout is for reference purposes only.
Standard Packaging
REEL PACK
Case Type
REEL
( pcs )
Reel Size
(inch)
SOT-363
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
SP-JTR49
REV:A
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Comchip Technology CO., LTD.
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