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ZTX327

Description
NPN SILICON PLANAR R.F. MEDIUM POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size34KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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ZTX327 Overview

NPN SILICON PLANAR R.F. MEDIUM POWER TRANSISTOR

ZTX327 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionIN-LINE, R-PSIP-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.4 A
Collector-based maximum capacity3 pF
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PSIP-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
Minimum power gain (Gp)8.5 dB
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)500 MHz
VCEsat-Max1 V
NPN SILICON PLANAR R.F.
MEDIUM POWER TRANSISTOR
ZTX327
ISSUE 2 – MARCH 94
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
j
:T
stg
SYMBOL
55
30
55
3.5
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
V
400
1.5
-55 to +175
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Static Forward
Current Transfer
Transitional
Frequency
Output Capacitance
R.F. power output
Efficiency
SYMBOL
V
(BR)CBO
V
(BR)CEO(sus)
V
(BR)CER(sus)
V
(BR)EBO
I
CEO
V
CE(SAT)
h
FE
f
T
C
obo
P
OUT
η
MIN.
55
30
55
3.5
TYP.
MAX. UNIT
V
V
CONDITIONS.
I
C
=100
µ
A, I
E
=0
IC=5mA, I
B
=0
I
C
=5mA, R
BE
=10
V
20
1.0
15
500
800
3.0
350
50
440
70
MHz
pF
mW
%
µ
A
I
E
=100
µ
A,I
C
=0
V
CB
=45V
V
I
C
=100mA, I
B
.=20mA
I
C
=50mA, V
CE
=5V
I
C
=25mA, V
CE
=15V
f=100MHz
V
CE
=15V, I
C
=25mA
f=100MHz
V
CC
=12V, P
IN
=80mW
f=400MHz
PAGE NO
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