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BFG10W/XT/R

Description
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size240KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BFG10W/XT/R Overview

TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal

BFG10W/XT/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionPLASTIC PACKAGE-4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)0.25 A
Collector-based maximum capacity3 pF
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10W/X
UHF power transistor
Product specification
1995 Sep 22

BFG10W/XT/R Related Products

BFG10W/XT/R BFG10W/X,115
Description TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal TRANS NPN 10V 250MA SOT343N
Is it Rohs certified? conform to conform to
Contacts 4 4
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.25 A 0.25 A
Collector-based maximum capacity 3 pF 3 pF
Collector-emitter maximum voltage 10 V 10 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 25 25
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 4 4
Maximum operating temperature 150 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.4 W 0.4 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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