Pressure sensors
C32 series
Series/Type:
Ordering code:
Date:
Version:
Absolute pressure sensor die for wet media
2009-08-03
3
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Identification/Classification 1
(header 1 + top left bar):
Identification/Classification 2
(header 2 + bottom left header bar):
Ordering code: (top right header bar)
Series/Type: (top right header bar)
Preliminary data (optional):
(if necessary)
Absolute pressure sensor die for wet media
Preliminary data
AS SEN PD
Pressure sensors
C32 series
EPCOS AG 2015. Reproduction, publication and dissemination of this publication, enclosures hereto and the information
contained therein without EPCOS' prior express consent is prohibited.
EPCOS AG is a TDK Group Company.
Pressure sensors
C32 series
Preliminary data
Applications
Medical devices
Automotive
Automation
Features
Piezoresistive MEMS technology
Small dimensions: 1.65 × 1.65 mm
Square diaphragm
Reference pressure chamber on topside
Measured media (back side):
Non-aggressive gases and fluids.
Unsuitable for substances which react with
glass or silicon.
Whetstone bridge with mV output,
ratiometric to supply voltage
Rated pressure ranges 1.6 up to 40 bar
Outstanding long-term stability
Delivery mode
Tray / foil
Dimensional drawings
1650±100
713
713
Absolute pressure sensor die for wet media
+100
400-0
150 A B
300±5
800±20
Note1
125
125
B
X11
X1
X10
X10
X5
613
763
Note2
1650±100
A
1325
B Note1
400±100
140
allowable edge disruptions
80 µm max.
allowable edge disruptions
50 µm max.
713
X2
50±25
X10
X11
X4
423
X10
760
260
electrical diagram:
glass
BOROFLOAT
TM
Si 100
all dimensions in µm
Note1: geometry of diaphragm depend on
specification
X5
p
R1
X4
R3
R4
R2
X1
1425
glass
BOROFLOAT
TM
X2
X1 :
X2 :
X4 :
X5 :
X10 :
X11 :
Vout+
VDD–
Vout–
VDD+
Substrate
Shield
AS SEN PD
Please read Cautions and warnings and
Important notes at the end of this document.
Page 2 of 8
2009-08-03
Pressure sensors
C32 series
Preliminary data
Technical data
Absolute pressure sensor die for wet media
Absolute maximum ratings
Parameter
Supply voltage
Maximum supply voltage
Temperature ranges
2)
Symbol
Conditions
Min.
Typ.
Max.
Units
V
DD
Without damage
1)
10
V
Operating temperature range
Storage temperature range
Pressure ranges
Operating pressure ranges
Over pressure
Burst pressure
T
a
T
st
–40
–40
–40
135
140
150
°
C
°
C
°
C
For t <15 min
3)
p
r
p
ov
p
berst
Absolute pressure
Absolute pressure
Absolute pressure
4)
5)
6)
0 ... 1.6
2.5
3
0 ... 40
bar
p
r
p
r
Electrical specifications
Parameter
Operating pressure
Symbol
p
r
Conditions
4)
Min.
Typ.
Max.
Units
bar
See next table
Supply voltage / bridge resistance
Operating supply voltage
Total bridge resistance
Temperature coefficient
of total bridge resistance
Output signal @ V
DD
= 5 V
Offset
Sensitivity
Temperature coefficient
of the sensitivity
Pressure hysteresis
V
0
S
α
S
β
S
pHys
16)
V
DD
R
S
α
Rs
β
Rs
7)
1.0
8)
9)
5.0
3.3
2.3
5
4.0
2.7
8
V
kΩ
10 /K
10 /K
–6
2
–3
@ 25 °
C
@ 25 °
C
2.6
2.0
3
@ 25 °
C
@ 25 °
C
@ 25 °
C
10)
13)
15)
See next table
See next table
–2.5
3
–0.1
–2.2
5
–1.9
8
0.1
mV
mV/bar
10 /K
10 /K
% FS
–6
2
–3
Long-term stability (Full scale normal output FSON = 120 mV)
Temperature hysteresis of offset
Temperature cycle drift of offset
High temperature drift of offset
Long term stability of offset
THV
0
TCDV
0
HTDV
0
LTSV
0
17)
17)
17)
17)
–0.2
–0.1
–0.25
–0.3
±0.1
±0.05
±0.05
±0.1
0.2
0.1
0.25
0.3
% FSON
% FSON
% FSON
% FSON
AS SEN PD
Please read Cautions and warnings and
Important notes at the end of this document.
Page 3 of 8
2009-08-03
Pressure sensors
C32 series
Preliminary data
Symbols and terms
1)
2)
Absolute pressure sensor die for wet media
3)
4)
5)
6)
7)
Maximum power supply V
DD
This is the maximal allowed voltage, which may be applied to the piezoresistive bridge circuit without damage.
Operating temperature range T
a
This is the operating Temperature range T
a,min
to T
a,max
. Because most of the sensor parameters depend on assembling
conditions like gluing, wire bonding etc, the die has to be tested over the operating temperature range by the customer
fully assembled. For design verification and process control samples, mounted in AK transducer package (AK2 series)
are tested over a reduced measuring temperature range of T
meas,min
to T
meas,max
.
Storage temperature range T
st
If the pressure sensor dies are stored in the temperature range T
st,min
to T
st,max
without applied voltage power supply, this
will not affect the performance of the pressure sensor dies.
Operating pressure range p
r
In the operating pressure range 0 to p
r,max
the pressure sensor die output characteristic is as defined in this specification.
Over pressure p
OV
Pressure cycles in the pressure range 0 to p
ov
do not affect the performance of the pressure sensor dies.
Burst pressure p
berst
Up to the burst pressure p
berst
the diaphragm of the sensor die will not be destroyed mechanically. This parameter is
tested at room temperature on samples mounted on an aluminium socket by applying the specified burst pressure for
10 minutes. The evaluation of this test is done by optical inspection of the diaphragm.
Operating power supply V
DD
The pressure sensor parameters are defined for a power supply voltage of V
DD
= 5 V. In the operating power supply
voltage range V
DD,min
to V
DD,max
the ratiometric parameters r(V
DD
) like sensitivity, offset voltage and the temperature
coefficient of the offset voltage are defined by:
r
(
V
DD
)
=
r(5[ V ])
8)
V
DD
5[ V ]
Total bridge resistance R
S
The total bridge resistance is defined between pad X5 and X2, (see the dimensional drawing in this data sheet) of the
closed piezoresistive bridge circuit. The total bridge resistance is in a good approximation the output impedance of the
piezoresistive bridge circuit. This parameter is tested completely on a wafer (wafer level test measurement).
Temperature coefficients of resistance
α
Rs
and
β
Rs
:
The temperature coefficients of resistance are tested for design verification on samples, mounted on AK transducer
package (AK2 series) over a reduced temperature range T
meas
,
min
= –20 ° to T
meas
,
max
= 80 ° with T
R
= 25 °
C
C
C.
The temperature coefficients of first and second order are defined with the polynomial:
9)
R
S
(T)
=
R
S
(T
=
25
°
C )
1
+α
Rs
T
−
25
°
C
+β
Rs
T
−
25
°
C
(
)
(
)
2
10)
11)
The coefficients
α
Rs
and
β
Rs
are calculated using the three measurement points of R
s
(T) at T
meas,min
, T
R
and T
meas,max
.
Offset voltage V
0
The offset voltage V
0
is the output voltage V
out
(p = 0 bar absolute) at zero absolute pressure and for a bridge voltage
power supply V
DD
= 5 V. The high range of the allowed offset voltage is due to the reference pressure in the glass cap
from 0 to 0.3 bar and to the tolerance of the sensitivity. The typical value of the reference pressure is 0.2 bar.
Before anodic glass bonding the offset voltage is tested completely on a wafer (wafer level test measurement)
with limits –25 mV < V
0
< 25 mV. For design verification V
0
is measured on samples, mounted in AK transducer package
(AK2 series) by extrapolating the output characteristic to zero bar.
It should be noted that this parameter may be influenced by assembly.
+
–
Temperature coefficients of offset voltage TCV
0
and TCV
0
The temperature coefficients of offset voltage are defined for a bridge voltage power supply V
DD
= 5 V.
These parameters strongly depend on assembly conditions like gluing, wire bonding etc.
The temperature coefficients of offset voltage are tested for design verification on samples, mounted on AK transducer
package (AK2 series) over a reduced temperature range T
meas
,
min
= –20 ° to T
meas
,
max
= 80 ° with T
R
= 25 °
C
C
C.
Assuming the offset voltage is mainly due to induce stress TCV
0
may be calculated by extrapolating using:
V
0
(T )
=
1
+ α
s
(T
−
25
°
C)
+ β
s
(T
−
25
°
C)
2
(
) (
V (25
°
C)
+
v (T
−
25
°
C)
+
v
o
1
2
(T
−
25
°
C)
2
)
AS SEN PD
Please read Cautions and warnings and
Important notes at the end of this document.
Page 5 of 8
2009-08-03
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