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MSR630AGC-1512

Description
1T-SRAM 存储器 IC 1.152Gb(16M x 72) 并联 1.25 GHz 2.7 ns 676-BGA(27x27)
Categorysemiconductor    memory   
ManufacturerMoSys Inc
Environmental Compliance
Download Datasheet Parametric View All

MSR630AGC-1512 Overview

1T-SRAM 存储器 IC 1.152Gb(16M x 72) 并联 1.25 GHz 2.7 ns 676-BGA(27x27)

MSR630AGC-1512 Parametric

Parameter NameAttribute value
category
MakerMoSys Inc
series-
Packagetray
memory typeVolatile
memory formatSRAM
technology1T-SRAM
storage1.152Gb(16M x 72)
memory interfacein parallel
Write cycle time - words, pages-
Voltage - Power supply1V
Operating temperature0°C ~ 85°C(TC)
Installation typesurface mount type
Package/casing676-BGA
Supplier device packaging676-BGA(27x27)
Clock frequency1.25 GHz
interview time2.7 ns
Basic product numberMSR630

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