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IS26KS512S-DPBLI00

Description
FLASH - NOR 存储器 IC 512Mb(64M x 8) 并联 166 MHz 96 ns 24-VFBGA(6x8)
Categorysemiconductor    memory   
ManufacturerIntegrated Silicon Solution ( ISSI )
Environmental Compliance
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IS26KS512S-DPBLI00 Overview

FLASH - NOR 存储器 IC 512Mb(64M x 8) 并联 166 MHz 96 ns 24-VFBGA(6x8)

IS26KS512S-DPBLI00 Parametric

Parameter NameAttribute value
category
MakerIntegrated Silicon Solution ( ISSI )
series-
Packagetray
memory typenon-volatile
memory formatflash memory
technologyFLASH - NOR
storage512Mb(64M x 8)
memory interfacein parallel
Write cycle time - words, pages-
Voltage - Power supply1.7V ~ 1.95V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount type
Package/casing24-VBGA
Supplier device packaging24-VFBGA(6x8)
Clock frequency166 MHz
interview time96 ns
Basic product numberIS26KS512
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