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NXP Semiconductors
Product data sheet
NPN general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
NPN transistor in a SOT323 plastic package.
PNP complements: BC859W and BC860W.
MARKING
TYPE
NUMBER
BC849BW
BC849CW
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
Fig.1
MARKING
CODE
(1)
2B∗
2C∗
TYPE
NUMBER
BC850BW
BC850CW
MARKING
CODE
(1)
2F∗
2G∗
handbook, halfpage
BC849W; BC850W
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
Top view
2
MAM062
Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BC849W
BC850W
V
CEO
collector-emitter voltage
BC849W
BC850W
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
30
45
5
100
200
200
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
CONDITIONS
open emitter
−
−
30
50
V
V
MIN.
MAX.
UNIT
1999 Apr 12
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC849BW; BC850BW
BC849CW; BC850CW
V
CEsat
V
BE
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA; note 1
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 200
μA;
V
CE
= 5 V; R
S
= 2 kΩ;
f = 10 Hz to 15.7 kHz
I
C
= 200
μA;
V
CE
= 5 V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 2 mA; V
CE
= 5 V; see Figs 2 and 3
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
BC849W; BC850W
VALUE
625
UNIT
K/W
MIN.
−
−
−
200
420
−
−
580
−
−
−
100
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
11
−
−
−
MAX.
15
5
100
450
800
250
600
700
770
3
−
−
4
4
UNIT
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
dB
1999 Apr 12
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BC849W; BC850W
handbook, full pagewidth
300
MBH724
hFE
VCE = 5 V
200
100
0
10
−2
10
−1
1
10
10
2
IC (mA)
10
3
BC849BW; BC850BW.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
600
MBH725
VCE = 5 V
hFE
400
200
0
10
−2
10
−1
1
10
10
2
IC (mA)
10
3
BC849CW; BC850CW.
Fig.3 DC current gain; typical values.
1999 Apr 12
4
Embedded System
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