
28A, 100V, 0.089ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Infineon |
| package instruction | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 250 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 28 A |
| Maximum drain-source on-resistance | 0.089 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-204AE |
| JESD-30 code | O-MBFM-P2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 112 A |
| Certification status | Not Qualified |
| Guideline | CECC |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |