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PN5132

Description
500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size628KB,4 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

PN5132 Overview

500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

PN5132 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Parts packaging codeTO-92
package instructionTO-92, 3 PIN
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.03 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
PN4250A
w w w. c e n t r a l s e m i . c o m
SILICON
PNP TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR PN4250A is a
silicon PNP transistor designed for low level, low noise
amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
IEBO
BVCBO
BVCES
BVCEO
BVEBO
VCE(SAT)
hFE
Cob
hfe
hie
hoe
hre
NF
NF
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JC
Θ
JA
UNITS
V
V
V
V
mA
mW
°C
°C/W
°C/W
60
60
60
5.0
500
625
-65 to +150
83.3
200
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=50V
VEB=3.0V
IC=10μA
IC=10μA
IC=5.0mA
IE=10μA
IC=10mA, IB=0.5mA
VCE=5.0V, IC=100μA
VCB=5.0V, f=1.0MHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=250μA, RS=1.0kΩ
f=1.0kHz, BW=150Hz
VCE=5.0V, IC=20μA, RS=10kΩ
f=1.0kHz, BW=150Hz
250
6.0
5.0
60
60
60
5.0
MAX
10
20
UNITS
nA
nA
V
V
V
V
0.25
250
700
6.0
800
20
50
10
2.0
2.0
V
pF
μS
x10
-4
dB
dB
R0 (26-July 2013)

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