IXSH20N60A datasheet, PDF - EEWORLD Datasheet

IXSH20N60A: DescriptionInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size751KB，26 Pages; ManufacturerIXYS

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IXSH20N60A Overview

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

Parameter Name	Attribute value
Maker	IXYS
Parts packaging code	TO-247AD
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
Other features	HIGH SPEED
Shell connection	COLLECTOR
Maximum collector current (IC)	40 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
Gate emitter threshold voltage maximum	6.5 V
Gate-emitter maximum voltage	20 V
JEDEC-95 code	TO-247AD
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	150 W
Maximum power dissipation(Abs)	150 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal on time (ton)	300 ns
VCEsat-Max	3 V
Base Number Matches	1

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