K7N321845M-HC150 datasheet, PDF

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K7N321845M-HC150: DescriptionZBT SRAM, 2MX18, 3.8ns, CMOS, PBGA119, BGA-119; Categorystorage storage; File Size315KB，28 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K7N321845M-HC150 Overview

ZBT SRAM, 2MX18, 3.8ns, CMOS, PBGA119, BGA-119

K7N321845M-HC150 Parametric

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	BGA,
Contacts	119
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	3.8 ns
Other features	PIPELINED ARCHITECTURE
JESD-30 code	R-PBGA-B119
length	22 mm
memory density	37748736 bit
Memory IC Type	ZBT SRAM
memory width	18
Number of functions	1
Number of terminals	119
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX18
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum supply voltage (Vsup)	2.625 V
Minimum supply voltage (Vsup)	2.375 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
width	14 mm
Base Number Matches	1

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K7N323645M

K7N321845M

Document Title

1Mx36 & 2Mx18-Bit Pipelined NtRAM

1Mx36 & 2Mx18 Pipelined NtRAM

Revision History

Rev. No.

0.0

0.1

0.2

History

1. Initial document.

1. Add 165FBGA package

1.Update JTAG scan order

2. Speed bin merge.

From K7N3236(18)49M to K7N3236(18)45M

3. AC parameter change.

tOH(min)/tLZC(min) from 0.8 to 1.5 at -25

tOH(min)/tLZC(min) from 1.0 to 1.5 at -22

tOH(min)/tLZC(min) from 1.0 to 1.5 at -20

1. Change pin out for 165FBGA

- x18/x36 ; 11B => from A to NC , 2R ==> from NC to A

1. Insert pin at JTAG scan order of 165FBGA in connection with

pin out change

- x18/x36 ; insert Pin ID of 2R to BIT number of 69

1. Add Icc, Isb, Isb1 and Isb2 values.

1. Final datasheet release.

1. Change the Stand-by current (Isb)

Before

After

Isb - 25 : 120

170

- 22 : 110

160

- 20 : 100

150

- 16 :

140

- 15 :

140

- 13 :

140

Isb1

110

Isb2

100

Draft Date

May. 10. 2001

Aug. 29. 2001

Dec. 31. 2001

Remark

Preliminary

0.3

Feb. 14. 2002

Preliminary

0.4

Apr. 20. 2002

Preliminary

0.5

1.0

1.1

May. 10. 2002

Sep. 26. 2002

Oct. 17, 2003

Preliminary

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

-1-

Oct. 2003

Rev 1.1

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