EEWORLDEEWORLDEEWORLD

Part Number

Search

DS1220AD-200IND

Description
2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA24
Categorystorage   
File Size147KB,10 Pages
ManufacturerDALLAS
Websitehttp://www.dalsemi.com
Download Datasheet Parametric View All

DS1220AD-200IND Online Shopping

Suppliers Part Number Price MOQ In stock  
DS1220AD-200IND - - View Buy Now

DS1220AD-200IND Overview

2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA24

DS1220AD-200IND Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals24
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage5.5 V
Minimum supply/operating voltage4.5 V
Rated supply voltage5 V
maximum access time200 ns
Processing package description0.720 INCH, PLASTIC, DIP-24
stateDISCONTINUED
CraftsmanshipCMOS
packaging shapeRECTANGULAR
Package SizeMICROELECTRONIC ASSEMBLY
Terminal formPIN/PEG
terminal coatingTIN LEAD
Terminal locationDUAL
Packaging MaterialsUNSPECIFIED
Temperature levelINDUSTRIAL
memory width8
organize2K X 8
storage density16384 deg
operating modeASYNCHRONOUS
Number of digits2048 words
Number of digits2K
Memory IC typeNON-VOLATILE SRAM MODULE
serial parallelPARALLEL
DS1225AB/AD
64k Nonvolatile SRAM
www.dalsemi.com
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Directly replaces 8k x 8 volatile static RAM
or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 28-pin DIP package
Read and write access times as fast as 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power
is applied for the first time
Full ±10% V
CC
operating range (DS1225AD)
Optional ±5% V
CC
operating range
(DS1225AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
PIN ASSIGNMENT
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
28-Pin ENCAPSULATED PACKAGE
720-mil EXTENDED
PIN DESCRIPTION
A0-A12
DQ0-DQ7
CE
WE
OE
V
CC
GND
NC
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
- No Connect
DESCRIPTION
The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words
by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which
constantly monitors V
CC
for an out-of-tolerance condition. When such a condition occurs, the lithium
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAMs can be used in place of existing 8k x 8 SRAMs directly conforming to
the popular bytewide 28-pin DIP standard. The devices also match the pinout of the 2764 EPROM and
the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for
microprocessor interfacing.
1 of 10
111899

Recommended Resources

Some examples of projects using LaunchPad (only the name and a brief description)
If you want to use LaunchPad to make something, come and have a look! Although there is only a title and a brief description, it is enough to show that we can use LaunchPad to do a lot of things! You ...
千里千寻 Microcontroller MCU
Newbie question, what does Wafer mean here?
I saw a bom that said: Socket, antenna base, Wafer, patch, SZH000101 Socket/strip, Wafer, patch horizontal, 4PIN, pin pitch 1.25mm. I don't know what Wafer means here? Is it the manufacturer's name or...
yuqinfeng Embedded System
Has anyone used sensor tile's SPI?
I plan to use SPI to transfer data. It seems that the most convenient way is to directly modify the program that writes to the SD card in the datalog. Has anyone rewritten it before? Please give me so...
雪瑞哥哥 MEMS sensors
Target applications and test items for 4200 Pulsed IV measurements of CMOS transistors
The 4200-PIV [1] package includes test items that address the most common parametric transistor tests: Vds–id and Vgs-id . These two tests offer both DC and pulse modes, allowing correlation between t...
Jack_ma Test/Measurement
DIY with prizes——laotui participated in the STM32F429Discovery event
[size=3][color=#000000]The STM32F429Discovery function is really powerful and can achieve many functions. I only conducted a simple test after receiving the board. [/color][/size][size=3][color=#00000...
laotui stm32/stm8
Collecting the system delay of encoding, decoding and display on the DM8168 platform
[i=s]This post was last edited by Ternence.Hsu on 2015-6-15 16:27[/i] [color=rgb(0, 0, 0)][backcolor=rgb(255, 255, 255)][size=4] When debugging an audio or video platform, one often has to consider th...
Ternence.Hsu DSP and ARM Processors

Popular Articles

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 536  2566  103  1209  1844  11  52  3  25  38 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号