DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK231
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• Low Noise Figure
• High Power Gain
• Enhancement Typ.
0.4
−0.05
+0.1
NF = 2.0 dB TYP. (@ = 900 MHz)
G
ps
= 17.5 dB TYP. (@ = 900 MHz)
PACKAGE DIMENSIONS
(Unit: mm)
0.4
−0.05
0.16
+0.1
−0.06
2.8
−0.3
1.5
−0.1
2
+0.2
+0.1
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
• Small Package : 4 Pins Mini Mold Package. (SC-61)
(1.8)
0.85 0.95
2.9±0.2
+0.2
3
4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*R
L
≥
10 kΩ
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
±8
(±10)*
±8
(±10)*
18
18
25
200
125
−55
to +125
V
V
V
V
mA
mW
°C
°C
V
1
0.6
−0.05
5°
5°
+0.2
−3.1
1.1
0.8
5°
0 to 0.1
5°
PIN CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage
due to those voltages or fields.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10030EJ01V0DS (1st edition)
(Previous No. P10588EJ2V0DS00)
Date Published October 2001 CP(K)
Printed in Japan
The mark
!
shows major revised points.
NEC Compound Semiconductor Devices 2001
NEC Corporation 1993
0.4
−0.05
+0.1
+0.1
(1.9)
3SK231
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transfer Admittance
SYMBOL
BV
DSX
I
DSx
V
G1S(off)
V
G2S(off)
I
G1SS
I
G2SS
y
fs
15
19.5
MIN.
18
0.01
−1.0
+0.6
+1.1
10.0
+1.0
+1.6
±20
±20
24
TYP.
MAX.
UNIT
V
mA
V
V
nA
nA
mS
TEST CONDITIONS
V
G1S
= V
G2S
=
−2
V, I
D
= 10
µ
A
V
DS
= 6 V, V
G2S
= 4.5 V, V
G1S
= 0.75 V
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10
µ
A
V
DS
= 6 V V
G1S
= 3 V, I
D
= 10
µ
A
V
DS
= V
G2S
= 0 V, V
G1S
=
±8
V
V
DS
= V
G1S
= 0 V, V
G2S
=
±8
V
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
f = 1 kHz
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
C
iss
C
oss
C
rss
G
ps
NF1
14.0
1.0
0.7
1.5
1.0
0.015
17.5
2.0
2.0
1.3
0.03
21.0
3.0
pF
pF
pF
dB
dB
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
f = 900 MHz
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
f = 1 MHz
I
DSX
Classification
Rank
Marking
I
DSX
(mA)
U1C/UAC *
U1C
0.01 to 4.0
U1D/UAD *
U1D
2.0 to 10.0
* Old Specification / New Specification
2
Data Sheet PU10030EJ01V0DS
3SK231
CHARACTERISTICS CURVE (T
A
= 25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
-Total Power Dissipation-mW
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50 V
G2S
= 4.5 V
V
G1S
= 3 V
I
D
-Drain Current-mA
Free Air
400
40
30
20
10
2.5V
2.0V
1.5V
1.0V
0.5V
300
200
100
0
25
50
75
100
125
0
5
V
DS
-Drain to Source Voltage-V
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
10
T
A
-Ambient Temperature-°C
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
|y
fs
|-Forward Transfer Admittance-mS
25
I
D
-Drain Current-mA
V
DS
= 6 V
V
G2S
= 3.5 V
3.0 V
25
20
15
10
5
0
-1
V
DS
= 6 V
f = 1 KHz
V
G2S
= 5 V
20
15
10
2.5 V
4V
3V
2V
2.0 V
5
1.5 V
0
-1
0
1
2
3
4
0
1
2
3
4
V
G1S
-Gate1 to Source Voltage-V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
2.5
|y
fs
|-Forward Transfer Admittance-mS
V
G1S
-Gate1 to Source Voltage-V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 4.5 V)
2.0
f = 1 MHz
1.5
40
32
24
16
8
0
V
DS
= 6 V
f = 1 KHz
5V
V
G2S
= 6 V
5V
4V
3V
C
iss
-Input Capacitance-pF
1.0
0.5
4
2V
8
12
16
20
0
1.0
2.0
3.0
4.0
5.0
I
D
-Drain Current-mA
V
G2S
-Gate2 to Source Voltage-V
Data Sheet PU10030EJ01V0DS
3
3SK231
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
2.5
I
D
= 10 mA
(at V
DS
= 6 V
2.0 V
G2S
= 4.5 V)
f = 1 MHz
1.5
10
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
f = 900 MHz
20 I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 4.5 V)
10
G
ps
C
oss
-Output Capacitance-pF
NF-Noise Figure-dB
G
ps
-Power Gain-dB
5
0
1.0
−10
−20
0.5
NF
0
1.0
2.0
3.0
4.0
5.0
0
0
1.0
2.0
3.0
4.0
5.0
V
G2S
-Gate2 to Source Voltage-V
V
G2S
-Gate2 to Source Voltage-V
4
Data Sheet PU10030EJ01V0DS
3SK231
Gps AND NF TEST CIRCUIT AT f = 900 MHz
V
G2S
(3 V)
1000 pF
47 kΩ
1000 pF
to 10 pF
to 10 pF
INPUT
50
Ω
to 10 pF
to 10 pF
L
1
47 kΩ
RFC
L
2
OUTPUT
50
Ω
1000 pF
1000 pF
L
1
, L
2
; 35
×
5
×
0.2 mm
V
DD
(6 V)
V
G1S
Data Sheet PU10030EJ01V0DS
5
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