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3SK255U1G

Description
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, SUPER MINIMOLD PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size255KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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3SK255U1G Overview

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, SUPER MINIMOLD PACKAGE-4

3SK255U1G Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknown
Other featuresLOW NOISE
ConfigurationSINGLE
Maximum drain current (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.03 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)15 dB
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

3SK255U1G Related Products

3SK255U1G 3SK255
Description UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, SUPER MINIMOLD PACKAGE-4 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, SUPER MINIMOLD PACKAGE-4
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4
Reach Compliance Code unknown unknown
Other features LOW NOISE LOW NOISE
Configuration SINGLE SINGLE
Maximum drain current (ID) 0.025 A 0.025 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.03 pF 0.03 pF
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Minimum power gain (Gp) 15 dB 15 dB
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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