BYG10D thru BYG10Y
www.vishay.com
Vishay General Semiconductor
Standard Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Controlled avalanche characteristics
• Glass passivated junction
• Low reverse current
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-214AC (SMA)
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
1.5 A
200 V to 1600 V
30 A
1.0 μA
1.15 V
20 mJ
150 °C
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
E
R
T
J
max.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per J-STD-002
and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Note
• BYG10Y for commercial grade only
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I
(BR)R
= 1 A, T
J
= 25 °C (for BYG10D thru BYG10M)
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
R
T
J
, T
STG
SYMBOL
BYG10D
BYG10D
200
BYG10G
BYG10G
400
BYG10J
BYG10J
600
1.5
30
BYG10K
BYG10K
800
BYG10M
BYG10M
1000
BYG10Y
BYG10Y
1600
V
A
A
UNIT
20
- 55 to + 150
mJ
°C
Revision: 21-Dec-11
Document Number: 88957
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYG10D thru BYG10Y
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum
instantaneous
forward voltage
(1)
Maximum DC
reverse current
Maximum reverse
recovery time
TEST CONDITIONS
I
F
= 1 A
I
F
= 1.5 A
V
R
= V
RRM
T
J
= 25 °C
T
J
= 25 °C
T
J
= 100 °C
V
F
I
R
t
rr
SYMBOL
BYG10D
BYG10G
BYG10J
BYG10K
1.1
1.15
1
10
4
V
BYG10M
BYG10Y
UNIT
μA
μs
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to lead
Typical thermal resistance, junction to ambient
SYMBOL
R
JL
R
JA
(1)
R
JA
(2)
R
JA
(1)
(3)
BYG10D
BYG10G
BYG10J
25
BYG10K
BYG10M
BYG10Y
UNIT
°C/W
°C/W
150
125
100
Notes
Mounted on epoxy-glass hard tissue
(2)
Mounted on epoxy-glass hard tissue, 50 mm
2
35 μm Cu
(3)
Mounted on Al-oxide-ceramic (Al O ), 50 mm
2
35 μm Cu
2 3
ORDERING INFORMATION
(Example)
PREFERRED P/N
BYG10D-E3/TR
BYG10D-E3/TR3
BYG10DHE3/TR
(1)
(1)
UNIT WEIGHT (g)
0.064
0.064
0.064
0.064
PREFERRED PACKAGE CODE
TR
TR3
TR
TR3
BASE QUANTITY
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
BYG10DHE3/TR3
Note
(1)
AEC-Q101 qualified
Revision: 21-Dec-11
Document Number: 88957
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYG10D thru BYG10Y
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Vishay General Semiconductor
100
400
Reverse Power Dissipation (mW)
350
300
250
200
150
100
50
0
V
R
= V
RRM
P
R
- Limit at 100 % V
R
10
Forward Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
0.1
P
R
- Limit at 80 % V
R
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
Forward Voltage (V)
Junction Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
R
θJA
≤
125 K/W
R
θJA
≤
150 K/W
V
R
= V
RRM
Half Sine-Wave
R
θJA
≤
25 K/W
30
f = 1 MHz
25
Average Forward Current (A)
Diode Capacitance (pF)
20
15
10
5
0
0.1
1
10
100
Ambient Temperature (°C)
Reverse Voltage (V)
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
1000
V
R
= V
RRM
5000
T
A
= 125 °C
Reverse Recovery Time (ns)
4000
T
A
= 100 °C
3000
T
A
= 75 °C
2000
T
A
= 50 °C
T
A
= 25 °C
1000
I
R
= 0.5 A, i
R
= 0.125 A
Reverse Current (µA)
100
10
1
25
50
75
100
125
150
0
0
0.2
0.4
0.6
0.8
1.0
Junction Temperature (°C)
Forward Current (A)
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 6 - Reverse Recovery Time vs. Forward Current
Revision: 21-Dec-11
Document Number: 88957
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYG10D thru BYG10Y
www.vishay.com
Vishay General Semiconductor
2000
Reverse Recovery Charge (nC)
T
A
= 125 °C
1600
T
A
= 100 °C
1200
T
A
= 75 °C
T
A
= 50 °C
800
T
A
= 25 °C
400
I
R
= 0.5 A, i
R
= 0.125 A
0
0
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 7 - Reverse Recovery Charge vs. Forward Current
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 21-Dec-11
Document Number: 88957
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
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