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935351494128

Description
RF Power Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size361KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

935351494128 Overview

RF Power Field-Effect Transistor

935351494128 Parametric

Parameter NameAttribute value
MakerNXP
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
NXP Semiconductors
Technical Data
Document Number: MRF085H
Rev. 1, 10/2017
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
MRF085H
This high ruggedness device is designed for use in high VSWR industrial,
scientific and medical applications and sub--GHz aerospace and defense and
mobile radio applications. Its unmatched input and output design allows for
wide frequency range use from 1.8 to 1215 MHz.
Typical Performance:
V
DD
= 50 Vdc
Frequency
(MHz)
30–520
(1,2)
520
(3)
Signal Type
CW
CW
P
out
(W)
50 CW
85 CW
G
ps
(dB)
14.0
25.6
D
(%)
40.0
73.3
1.8–1215 MHz, 85 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
Load Mismatch/Ruggedness
Frequency
(MHz)
520
(3)
Signal Type
CW
VSWR
> 65:1
at all Phase
Angles
P
in
(W)
0.56
(3 dB
Overdrive)
Test
Voltage
50
Result
No Device
Degradation
NI-
-650H-
-4L
1. Measured in 30–520 MHz broadband reference circuit.
2. The values shown are the minimum measured performance numbers across the
indicated frequency range.
3. Measured in 520 MHz narrowband test circuit (page 5).
Gate A
3
1 Drain A
Features
Unmatched input and output allowing wide frequency range utilization
Device can be used single--ended or in a push--pull configuration
Characterized from 30 to 50 V for ease of use
Suitable for linear application
Integrated ESD protection with greater negative gate--source voltage range
for improved Class C operation
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma etching
– Particle accelerators
– Industrial heating, welding and drying systems
Broadcast
– Radio broadcast
– VHF TV broadcast
Aerospace
– VHF omnidirectional range (VOR)
– HF and VHF communications
– Weather radar
Mobile radio
– VHF and UHF radios
Gate B
4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
2017 NXP B.V.
MRF085H
1
RF Device Data
NXP Semiconductors

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Description RF Power Field-Effect Transistor RF Power Field-Effect Transistor WIDEBAND RF POWER LDMOS TRANSIST
Maker NXP NXP -
Reach Compliance Code unknown unknown -
Base Number Matches 1 1 -
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